17534629. Reliability Macros for Contact Over Active Gate Layout Designs simplified abstract (International Business Machines Corporation)
Contents
Reliability Macros for Contact Over Active Gate Layout Designs
Organization Name
International Business Machines Corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Miaomiao Wang of Albany NY (US)
Reliability Macros for Contact Over Active Gate Layout Designs - A simplified explanation of the abstract
This abstract first appeared for US patent application 17534629 titled 'Reliability Macros for Contact Over Active Gate Layout Designs
Simplified Explanation
The abstract describes a patent application for reliability test macros for contact over active gate (COAG) layout designs. These macros include gate-shaped dielectric structures, source/drain regions, source/drain contacts, a dielectric fill material, and gate contacts. The dielectric fill material is present between the gate contacts and the source/drain contacts.
- Gate-shaped dielectric structures are placed over the active area of a substrate.
- Source/drain regions are located on opposite sides of the gate-shaped dielectric structures.
- Source/drain contacts are in direct contact with the source/drain regions.
- A dielectric fill material is placed on the source/drain contacts.
- Gate contacts are present over the gate-shaped dielectric structures in the active area.
- The dielectric fill material is present between the gate contacts and the source/drain contacts.
Potential applications of this technology:
- Testing the reliability of COAG layout designs in semiconductor devices.
Problems solved by this technology:
- Ensuring the reliability of COAG layout designs by providing a test macro specifically designed for this purpose.
Benefits of this technology:
- Allows for more accurate and efficient testing of COAG layout designs.
- Helps identify any potential reliability issues in COAG layout designs.
- Enables the improvement and optimization of COAG layout designs for better performance and reliability.
Original Abstract Submitted
Reliability test macros for contact over active gate (COAG) layout designs are provided. In one aspect, a COAG layout design reliability test macro includes: gate-shaped dielectric structures disposed over an active area of a substrate; source/drain regions present on opposite sides of the gate-shaped dielectric structures; source/drain contacts in direct contact with the source/drain regions; a dielectric fill material disposed on the source/drain contacts; and gate contacts present over, and in direct contact with, the gate-shaped dielectric structures in the active area, wherein the dielectric fill material is present in between the gate contacts and the source/drain contacts. Methods of forming and using the present COAG layout design reliability test macros are also provided.
