17837150. UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Min Gyu Sung of Latham NY (US)

Ruilong Xie of Niskayuna NY (US)

Heng Wu of Santa Clara CA (US)

Julien Frougier of Albany NY (US)

UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH - A simplified explanation of the abstract

This abstract first appeared for US patent application 17837150 titled 'UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH

Simplified Explanation

The abstract describes a semiconductor device and its formation. The device consists of a group of fins arranged in an array. The upper portion of each fin above a shallow trench isolation layer has a similar profile. However, the bottom portion of the inner fins below the isolation layer has a different profile compared to the bottom portion of the edge fins. The width of the bottom portion of the edge fins is greater than the width of the bottom portion of the inner fins.

  • The semiconductor device includes a fin array with fins grouped together.
  • The upper portion of each fin above the isolation layer has a similar profile.
  • The bottom portion of the inner fins below the isolation layer has a different profile compared to the edge fins.
  • The width of the bottom portion of the edge fins is greater than the width of the bottom portion of the inner fins.

Potential Applications

  • This technology can be used in the manufacturing of semiconductor devices.
  • It may find applications in various electronic devices such as computers, smartphones, and IoT devices.

Problems Solved

  • The different profiles of the bottom portions of the inner and edge fins help optimize the performance and functionality of the semiconductor device.
  • The wider bottom portion of the edge fins allows for better heat dissipation and electrical conductivity.

Benefits

  • The similar profile of the upper portions of the fins ensures uniformity and consistency in the device.
  • The different profiles of the bottom portions of the fins provide specific advantages for different areas of the device.
  • The wider bottom portion of the edge fins improves heat dissipation and electrical conductivity, leading to better overall performance.


Original Abstract Submitted

A semiconductor device and formation thereof. The semiconductor device includes a plurality of fins grouped in a fin array. A first profile of an upper portion of each of the plurality of fins in the fin array located above a top surface of a shallow trench isolation layer is substantially similar. A second profile of a bottom portion of one or more inner fins in the fin array located below the shallow trench isolation layer is different than a third profile of the bottom portion of edge fins in the fin array located below the shallow trench isolation layer. A width of the bottom portion of the edge fins in the fin array located below the shallow trench isolation layer is greater than a width of the bottom portion of the one or more inner fins in the fin array located below the shallow trench isolation layer.

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