International business machines corporation (20240136288). Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device simplified abstract
Contents
- 1 Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device
Organization Name
international business machines corporation
Inventor(s)
Nikhil Jain of Apple Valley MN (US)
Prabudhya Roy Chowdhury of Albany NY (US)
Kisik Choi of Watervliet NY (US)
Ruilong Xie of Niskayuna NY (US)
Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136288 titled 'Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device
Simplified Explanation
A semiconductor device described in the patent application consists of a channel with layers of silicon separated by a metal gate, source/drain regions next to the metal gate, a frontside power rail passing through the silicon layers, a dielectric separating the frontside power rail from the metal gate, a buried via-connect power rail connecting the frontside power rail to the source/drain regions, and a backside power rail linked to the frontside power rail. The layers of silicon are enclosed on three sides by the metal gate.
- The semiconductor device includes a channel with multiple layers of silicon separated by a metal gate.
- Source/drain regions are positioned adjacent to the metal gate.
- A frontside power rail extends through the layers of silicon.
- A dielectric separates the frontside power rail from the metal gate.
- A buried via-connect power rail links the frontside power rail to the source/drain regions.
- A backside power rail is connected to the frontside power rail.
Potential Applications
The technology described in this patent application could be applied in:
- Semiconductor manufacturing
- Integrated circuits
- Power management systems
Problems Solved
This technology addresses issues such as:
- Efficient power distribution in semiconductor devices
- Enhanced performance and reliability of integrated circuits
- Improved power management capabilities
Benefits
The benefits of this technology include:
- Increased efficiency in power distribution
- Enhanced performance of semiconductor devices
- Improved reliability and longevity of integrated circuits
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Automotive electronics
- Industrial automation systems
Possible Prior Art
One possible prior art for this technology could be the use of metal gates in semiconductor devices to control the flow of current. Additionally, buried power rails have been utilized in previous semiconductor designs to improve power distribution efficiency.
Unanswered Questions
How does this technology compare to existing power management solutions in semiconductor devices?
This article does not provide a direct comparison with existing power management solutions in semiconductor devices. Further research and analysis would be needed to determine the specific advantages and disadvantages of this technology in comparison to current solutions.
What impact could this technology have on the overall performance and energy efficiency of electronic devices?
While the benefits of this technology are outlined in the article, the specific impact on the overall performance and energy efficiency of electronic devices is not discussed. Additional studies and testing would be required to quantify the potential improvements in performance and energy efficiency that this technology could offer.
Original Abstract Submitted
a semiconductor device includes: a channel having layers of silicon separated from each other; a metal gate in contact with the layers of silicon; source/drain regions adjacent to the metal gate; a frontside power rail extending through the layers of silicon; a dielectric separating the frontside power rail from the metal gate; a via-connect buried power rail extending through the dielectric and coupling the frontside power rail to the source/drain regions; and a backside power rail coupled to the frontside power rail. the layers of silicon are wrapped on three sides by the metal gate.
