International business machines corporation (20240105613). DIRECT BACKSIDE CONTACT WITH REPLACEMENT BACKSIDE DIELECTRIC simplified abstract
Contents
- 1 DIRECT BACKSIDE CONTACT WITH REPLACEMENT BACKSIDE DIELECTRIC
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DIRECT BACKSIDE CONTACT WITH REPLACEMENT BACKSIDE DIELECTRIC - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
DIRECT BACKSIDE CONTACT WITH REPLACEMENT BACKSIDE DIELECTRIC
Organization Name
international business machines corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Kisik Choi of Watervliet NY (US)
Son Nguyen of Schenectady NY (US)
Nicholas Alexander Polomoff of Hopewell Junction NY (US)
DIRECT BACKSIDE CONTACT WITH REPLACEMENT BACKSIDE DIELECTRIC - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105613 titled 'DIRECT BACKSIDE CONTACT WITH REPLACEMENT BACKSIDE DIELECTRIC
Simplified Explanation
The semiconductor device described in the patent application includes a frontside with metal structures, transistors with source/drain positioned within nanolayers forming a gate structure, a power circuit on the backside connected to the transistors, and backside dielectric isolation to electrically isolate the power circuit from the transistors.
- Transistors with source/drain positioned within nanolayers forming a gate structure
- Power circuit on the backside connected to the transistors
- Backside dielectric isolation to electrically isolate the power circuit from the transistors
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as smartphones, computers, and other consumer electronics.
Problems Solved
This technology solves the problem of electrical interference between the power circuit and the transistors in semiconductor devices, improving overall performance and reliability.
Benefits
The benefits of this technology include improved electrical isolation, enhanced performance, and increased reliability of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance electronic devices for the consumer electronics market.
Possible Prior Art
One possible prior art for this technology could be the use of backside dielectric isolation in semiconductor devices to improve electrical isolation and performance.
Unanswered Questions
How does this technology compare to existing methods of electrical isolation in semiconductor devices?
This article does not provide a direct comparison to existing methods of electrical isolation in semiconductor devices.
What are the specific manufacturing processes involved in implementing this technology in semiconductor devices?
This article does not detail the specific manufacturing processes involved in implementing this technology in semiconductor devices.
Original Abstract Submitted
a semiconductor device includes a frontside including first metal structures, transistors disposed between the frontside and a backside opposite the frontside, each transistor including a source/drain positioned within a stack of nanolayers, the stack of nanolayers forming a gate structure and a power circuit on the backside and connected to the transistors by backside contacts. a backside dielectric isolation has a horizontal portion along a backside of the gate structure and a vertical portion substantially perpendicular to the backside and self-aligned to selected source/drains to electrically isolate the power circuit from the transistors.
