17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

STACKED FETS WITH NON-SHARED WORK FUNCTION METALS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

Junli Wang of Slingerlands NY (US)

Dechao Guo of Niskayuna NY (US)

Ruqiang Bao of Niskayuna NY (US)

Rishikesh Krishnan of Cohoes NY (US)

Balasubramanian S. Pranatharthiharan of Santa Clara CA (US)

STACKED FETS WITH NON-SHARED WORK FUNCTION METALS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17545610 titled 'STACKED FETS WITH NON-SHARED WORK FUNCTION METALS

Simplified Explanation

The patent application describes a semiconductor structure that consists of two stacked FET devices. Each device has a different functional gate structure with a different work function metal. The structure ensures that there is no overlap of the work function metals between the two devices.

• The semiconductor structure includes two stacked FET devices.
• The first FET device has a functional gate structure with a first work function metal.
• The second FET device has a functional gate structure with a second work function metal.
• The first work function metal is not present in the area where the second work function metal is located, and vice versa.
• This design eliminates the presence of shared work function metals in the semiconductor structure.

Potential Applications

• This technology can be used in the manufacturing of integrated circuits and semiconductor devices.
• It can be applied in various electronic devices such as smartphones, computers, and IoT devices.

Problems Solved

• The absence of shared work function metals prevents any interference or cross-talk between the two FET devices.
• It ensures the proper functioning and performance of each individual device in the semiconductor structure.

Benefits

• The structure provides improved isolation and control over the two FET devices.
• It allows for more precise and efficient operation of the semiconductor structure.
• The absence of shared work function metals enhances the overall performance and reliability of the devices.

Original Abstract Submitted

A semiconductor structure is provided that includes a first FET device stacked over a second FET device, wherein the first FET device contains a first functional gate structure containing a first work function metal and the second FET device contains a second functional gate structure containing a second work function metal. In the structure, the first work function metal is absent from an area including the second work function metal, and vice versa. Thus, no shared work functional metal is present in the semiconductor structure.