17949579. SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract (International Business Machines Corporation)
Contents
- 1 SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 What are the specific materials used in the alternating layers of the channels in the integrated circuit structure described in the patent application?
- 1.9.2 How does the number of active and inactive layers of the conductive semiconductor material affect the performance of the transistors in the integrated circuit structure?
- 1.10 Original Abstract Submitted
SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices
Organization Name
International Business Machines Corporation
Inventor(s)
Min Gyu Sung of Latham NY (US)
Ruilong Xie of Niskayuna NY (US)
Heng Wu of Santa Clara CA (US)
Julien Frougier of Albany NY (US)
SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices - A simplified explanation of the abstract
This abstract first appeared for US patent application 17949579 titled 'SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices
Simplified Explanation
The integrated circuit structure described in the patent application includes multiple transistors formed using channels with alternating layers of conductive semiconductor material and insulative material. Some transistors have the same number of layers of conductive semiconductor material in corresponding channel regions but different numbers of active and inactive layers. Active layers form channels electrically coupled to S/D regions, while floating layers are electrically isolated in the channel region.
- The integrated circuit structure includes a memory cell and multiple transistors formed using channels with alternating layers of conductive semiconductor material and insulative material.
- Some transistors have the same number of layers of conductive semiconductor material in corresponding channel regions but different numbers of active and inactive layers.
- Active layers form channels electrically coupled to S/D regions, while floating layers are electrically isolated in the channel region.
Potential Applications
The technology described in the patent application could be applied in:
- Memory devices
- Processors
- Integrated circuits
Problems Solved
This technology helps in:
- Improving the performance of memory cells
- Enhancing the efficiency of transistors
- Increasing the overall functionality of integrated circuits
Benefits
The benefits of this technology include:
- Higher speed and performance
- Improved power efficiency
- Enhanced reliability and durability
Potential Commercial Applications
The technology could be used in various commercial applications such as:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art related to this technology could be the use of stacked layers in semiconductor devices to improve performance and functionality.
What are the specific materials used in the alternating layers of the channels in the integrated circuit structure described in the patent application?
The specific materials used in the alternating layers of the channels are conductive semiconductor material and insulative material.
How does the number of active and inactive layers of the conductive semiconductor material affect the performance of the transistors in the integrated circuit structure?
The number of active and inactive layers of the conductive semiconductor material determines the electrical coupling and isolation within the transistors, which in turn affects the functionality and efficiency of the transistors in the integrated circuit structure.
Original Abstract Submitted
An integrated circuit structure includes a memory cell and multiple transistors therein. The multiple transistors are formed using channels including a stack having alternating layers of conductive semiconductor material and layers of other material that are insulative. Two or more of the multiple transistors have a same number of layers of the conductive semiconductor material in corresponding channel regions but have different numbers of active layers and inactive layers of the conductive semiconductor material. An active layer is a layer forming a channel in the channel region that is electrically coupled to S/D regions in a corresponding transistor, while a floating layer is a layer in the channel region electrically isolated from the S/D regions in the corresponding transistor. Methods for forming the integrated circuit structure are disclosed.
