International business machines corporation (20240096886). HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract
Contents
- 1 HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS
Organization Name
international business machines corporation
Inventor(s)
Kangguo Cheng of Schenectady NY (US)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Chanro Park of Clifton Park NY (US)
Min Gyu Sung of Latham NY (US)
HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096886 titled 'HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS
Simplified Explanation
The semiconductor patent application describes a structure with two Gallium Arsenide Field Effect Transistors (GAA FETs), each having different gate dielectric structures and gate conductors.
- The first GAA FET has only the first gate dielectric in its gate structure, providing a lower effective gate dielectric resistance compared to the second GAA FET which has both first and second gate dielectrics.
- The first GAA FET includes a first gate conductor, while the second GAA FET includes both the first and second gate conductors, separated by the second gate dielectric.
Potential Applications
This technology could be applied in the development of high-performance semiconductor devices, such as in advanced integrated circuits and microprocessors.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by optimizing the gate dielectric structures and conductors.
Benefits
- Enhanced performance and efficiency of semiconductor devices - Improved control over gate dielectric resistance - Potential for higher speed and lower power consumption in electronic devices
Potential Commercial Applications
"Optimizing Gate Dielectric Structures in Semiconductor Devices for Enhanced Performance"
Possible Prior Art
There may be prior art related to optimizing gate dielectric structures in semiconductor devices, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology impact the overall power consumption of electronic devices?
The abstract does not specify the direct impact on power consumption, so further research or experimentation may be needed to determine this aspect.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
The abstract does not address the scalability or manufacturing challenges of this technology, leaving room for exploration in this area.
Original Abstract Submitted
a semiconductor includes a first gaa fet and second gaa fet. the second gaa fet includes a first gate dielectric and second gate dielectric within its gate structure. the first gaa fet includes just the first gate dielectric within its gate structure. the gate dielectric structure of the first gaa fet provides for a nominal or a lesser effective gate dielectric or gate dielectric resistance relative to an effective gate dielectric structure of the second gaa fet. the first gaa fet further includes a first gate conductor within its gate structure and the second gaa fet further includes the first gate conductor and a second gate conductor within its gate structure. the first gate conductor and the second gate conductor are separated by the second gate dielectric.
