17808116. POWER PLANES AND PASS-THROUGH VIAS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

POWER PLANES AND PASS-THROUGH VIAS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Ruilong Xie of Niskayuna NY (US)

Huai Huang of Clifton Park NY (US)

Hosadurga Shobha of Niskayuna NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

POWER PLANES AND PASS-THROUGH VIAS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17808116 titled 'POWER PLANES AND PASS-THROUGH VIAS

Simplified Explanation

The semiconductor device described in the patent application consists of multiple layers of metal and dielectric materials.

• The first metal layer contains signal tracks and power rails embedded in a dielectric layer.
• The second metal layer also contains signal tracks and power rails embedded in a dielectric layer.
• A metal plane is positioned between the first and second metal layers.
• A third dielectric layer separates the first metal layer from the metal plane.
• A fourth dielectric layer separates the second metal layer from the metal plane.

Potential applications of this technology:

• Integrated circuits
• Microprocessors
• Memory devices
• Power management systems

Problems solved by this technology:

• Efficient signal transmission and power distribution within a semiconductor device
• Reduction of signal interference and noise
• Improved performance and reliability of electronic systems

Benefits of this technology:

• Enhanced functionality and performance of semiconductor devices
• Higher data transfer rates and faster processing speeds
• Improved power efficiency and reduced energy consumption
• Increased reliability and durability of electronic systems.

Original Abstract Submitted

The semiconductor device includes a first metal layer, a second metal layer, a metal plane, a third dielectric layer and a fourth dielectric layer. The first metal layer comprises a first dielectric layer with a first plurality of signal track and a first plurality of power rails. The second metal layer comprises a second dielectric layer with a second plurality of signal tracks and a second plurality of power rails. The metal plane is between the first metal layer and the second metal layer. The third dielectric layer is between the first metal layer and the metal plane. The fourth dielectric layer is between the second metal layer and the metal plane.