International business machines corporation (20240128345). REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT simplified abstract
Contents
- 1 REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT
Organization Name
international business machines corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Ravikumar Ramachandran of Pleasantville NY (US)
Julien Frougier of Albany NY (US)
REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128345 titled 'REDUCED GATE TOP CD WITH WRAP-AROUND GATE CONTACT
Simplified Explanation
The semiconductor structure described in the abstract includes a unique configuration of field effect transistor (FET) devices with different gate threshold voltages, spacers, and gate contacts. Here are some key points to explain the patent/innovation:
- The semiconductor structure consists of multiple FET devices, each with a different gate threshold voltage.
- First spacers are placed on the sidewalls of each FET device.
- Second spacers are positioned over and in direct contact with the first spacers, with a greater width.
- A gate contact directly contacts an FET device, with only the upper portion of the gate contact touching third spacers on opposite ends.
- The second spacers can have a bi-layer configuration, and the gate contact wraps around the top portion of the FET device.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices, such as high-performance integrated circuits and microprocessors.
Problems Solved
This innovation helps in enhancing the performance and efficiency of semiconductor devices by optimizing the contact between the gate and the FET devices.
Benefits
The benefits of this technology include improved functionality, increased speed, and reduced power consumption in semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for manufacturing cutting-edge electronic devices.
Possible Prior Art
One possible prior art could be the use of spacers in semiconductor structures to control the gate length and improve device performance.
What are the specific dimensions of the first and second spacers in this semiconductor structure?
The specific dimensions of the first and second spacers are not provided in the abstract. Further details from the full patent application would be needed to answer this question accurately.
How does the gate contact wrap around the top portion of the FET device in direct contact with it?
The abstract mentions that the gate contact wraps around the top portion of the FET device, but the exact mechanism or design for this wrapping is not elaborated. More information from the detailed description of the patent application would be required to address this question effectively.
Original Abstract Submitted
a semiconductor structure is presented including a plurality of field effect transistor (fet) devices, each fet device having a different gate threshold voltage, first spacers disposed on sidewalls of each fet device, second spacers disposed over and in direct contact with the first spacers, the second spacers having a width greater than a width of the first spacers, and a gate contact directly contacting an fet device of the plurality of fet devices, where only an upper portion of the gate contact directly contacts third spacers on opposed ends thereof. the second spacers can have a bi-layer configuration and the gate contact wraps around a top portion of the fet device in direct contact with the gate contact.
