International business machines corporation (20240096699). SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract

SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI

Organization Name

international business machines corporation

Inventor(s)

Chen Zhang of Guilderland NY (US)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

Heng Wu of Santa Clara CA (US)

Min Gyu Sung of Latham NY (US)

SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096699 titled 'SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI

Simplified Explanation

A semiconductor structure is presented in a patent application, involving a backside contact of a nanosheet transistor positioned on a silicon (Si) layer of a wafer with a dielectric liner disposed between the backside contact and the Si layer. The dielectric liner is located below gate spacers of the nanosheet transistor, closer to the backside of the wafer than the frontside. The dielectric liner is vertically aligned with the gate spacers and inner spacers of a nanosheet stack of the transistor.

• Backside contact of a nanosheet transistor on a silicon layer of a wafer
• Dielectric liner below gate spacers, vertically aligned with gate and inner spacers of nanosheet stack
• Backside contact closer to backside of wafer than frontside

Potential Applications

The technology could be applied in:

• Advanced semiconductor devices
• High-performance electronics
• Nanotechnology research

Problems Solved

This innovation addresses:

• Improved performance of nanosheet transistors
• Enhanced integration of backside contacts
• Better alignment of components in semiconductor structures

Benefits

The benefits of this technology include:

• Increased efficiency in electronic devices
• Higher processing speeds
• Enhanced reliability and durability of semiconductor structures

Potential Commercial Applications

The technology could find commercial applications in:

• Semiconductor manufacturing companies
• Electronics industry
• Research institutions focusing on nanotechnology

Possible Prior Art

One possible prior art could be the use of dielectric liners in semiconductor structures to improve performance and alignment of components.

How does this technology compare to existing backside contact designs in nanosheet transistors?

The article does not provide a direct comparison with existing backside contact designs in nanosheet transistors. Further research or analysis may be needed to determine the specific advantages and differences.

What are the specific manufacturing processes involved in implementing the dielectric liner in this semiconductor structure?

The article does not delve into the detailed manufacturing processes involved in implementing the dielectric liner. Additional information or studies may be required to understand the intricacies of this aspect of the technology.

Original Abstract Submitted

a semiconductor structure is presented including a backside contact of a nanosheet transistor positioned on a silicon (si) layer of a wafer and a dielectric liner disposed between the backside contact and the si layer such that the dielectric liner is located below gate spacers of the nanosheet transistor. the backside contact is closer to a backside of the wafer than a frontside of the wafer. the dielectric liner is vertically aligned with the gate spacers and the dielectric liner is vertically aligned with inner spacers of a nanosheet stack of the nanosheet transistor.