17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

HEIGHT CONTROL IN NANOSHEET DEVICES

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Min Gyu Sung of Latham NY (US)

Kangguo Cheng of Schenectady NY (US)

Julien Frougier of Albany NY (US)

Ruilong Xie of Niskayuna NY (US)

Chanro Park of Clifton Park NY (US)

HEIGHT CONTROL IN NANOSHEET DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17943751 titled 'HEIGHT CONTROL IN NANOSHEET DEVICES

Simplified Explanation

The semiconductor device described in the patent application includes a substrate with a dense array region and an isolation region. It features multiple stacked nanosheet fin structures in the dense array region, each with the same nanosheet height. Additionally, there is at least one stacked nanosheet fin structure in the isolation region with a nanosheet height matching those in the dense array region.

• Stacked nanosheet fin structures in dense array region
• Uniform nanosheet height in each fin structure
• Stacked nanosheet fin structure in isolation region
• Nanosheet height consistency between dense array and isolation regions

Potential Applications

This technology could be applied in:

• Advanced semiconductor devices
• High-density integrated circuits
• Next-generation computing systems

Problems Solved

This innovation addresses issues related to:

• Enhancing device performance
• Improving transistor density
• Optimizing chip design

Benefits

The benefits of this technology include:

• Increased efficiency
• Enhanced functionality
• Greater miniaturization potential

Potential Commercial Applications

Optimizing Nanosheet Fin Structures for Semiconductor Devices: Improving Performance and Efficiency

Original Abstract Submitted

A semiconductor device including a substrate having a dense array region and an isolation region. The semiconductor device includes plurality of first fin structures of stacked nanosheets is present in the dense array region separated by a single pitch, wherein each fin structure in the first plurality of fin structures has a same first nanosheet height as measured from an upper surface of the substrate in the dense array region. The semiconductor device further includes at least one second fin structure of stacked nanosheets is present in the isolation region, wherein a number of second fin structure in the isolation region is less than a number of first fin structures in the dense array region, the at least one fin structure having a second nano sheet height that is measured from the upper surface of the substrate in the isolation region that is the same as the first nanosheet height.