17550658. GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Julien Frougier of Albany NY (US)

Andrew M. Greene of Slingerlands NY (US)

Ruilong Xie of Niskayuna NY (US)

Kangguo Cheng of Schenectady NY (US)

Veeraraghavan S. Basker of Schenectady NY (US)

GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17550658 titled 'GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL INNER SPACER

Simplified Explanation

The abstract describes a gate-all-around field effect transistor device, which includes channel layers, inner spacers, and an inner spacer liner.

• The gate-all-around field effect transistor device has one or more channel layers on a substrate.
• An inner spacer is wrapped around four sides of the end portion of each channel layer.
• A portion of an inner spacer liner is present between the uppermost channel layer and the outer spacer.

Potential applications of this technology:

• Integrated circuits
• High-performance computing
• Mobile devices
• Internet of Things (IoT) devices

Problems solved by this technology:

• Improved transistor performance
• Enhanced control over the flow of electrical current
• Reduction in power consumption
• Increased speed and efficiency of electronic devices

Benefits of this technology:

• Higher transistor density
• Improved device performance and functionality
• Lower power consumption
• Faster and more efficient electronic devices

Original Abstract Submitted

A gate-all-around field effect transistor device is provided. The gate-all-around field effect transistor device includes one or more channel layers on a substrate. The gate-all-around field effect transistor device further includes an inner spacer wrapped around four sides of an end portion of each of the one or more channel layers. The gate-all-around field effect transistor device further includes a portion of an inner spacer liner between a portion of an upper most channel layer and a portion of an outer spacer.