17551463. NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Pouya Hashemi of Purchase NY (US)

Alexander Reznicek of Troy NY (US)

Takashi Ando of Eastchester NY (US)

Ruilong Xie of Niskayuna NY (US)

NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER - A simplified explanation of the abstract

This abstract first appeared for US patent application 17551463 titled 'NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER

Simplified Explanation

The abstract describes a field effect device that includes a semiconductor nanosheet segment, a T-shaped inner spacer, a gate dielectric layer, a first work function material plug, and a second work function material layer.

  • The field effect device consists of a semiconductor nanosheet segment placed on top of a substrate.
  • A T-shaped inner spacer is present on the semiconductor nanosheet segment.
  • A gate dielectric layer is applied on the semiconductor nanosheet segment.
  • A first work function material plug is placed on the gate dielectric layer.
  • A second work function material layer is added on top of the first work function material plug and the center portion of the gate dielectric layer.
  • The second work function material layer is made of a different material than the first work function material plug.

Potential Applications

  • This field effect device can be used in various electronic devices, such as transistors and integrated circuits.
  • It can be utilized in the development of advanced semiconductor technologies.

Problems Solved

  • The field effect device addresses the need for improved performance and functionality in electronic devices.
  • It solves the problem of achieving different work function materials in a single device.

Benefits

  • The use of a T-shaped inner spacer enhances the performance and efficiency of the field effect device.
  • The combination of different work function materials allows for better control and customization of device characteristics.
  • The technology enables the development of more advanced and versatile electronic devices.


Original Abstract Submitted

A field effect device is provided. The field effect device includes a semiconductor nanosheet segment above a substrate, and a T-shaped inner spacer on the semiconductor nanosheet segment. The field effect device further includes a gate dielectric layer on the semiconductor nanosheet segment, and a first work function material plug on the gate dielectric layer. The field effect device further includes a second work function material layer on the first work function material plug and a center portion of the gate dielectric layer, wherein the second work function material layer is a different work function material from the first work function material plug.

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