17809076. STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Carl Radens of LaGrangeville NY (US)

Ruilong Xie of Niskayuna NY (US)

Albert M. Chu of Nashua NH (US)

Brent A. Anderson of Jericho VT (US)

STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING - A simplified explanation of the abstract

This abstract first appeared for US patent application 17809076 titled 'STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING

Simplified Explanation

The abstract describes a patent application for a complementary metal oxide semiconductor (CMOS) device with a hybrid cross-couple contact. The contact includes a frontside contact to the gate of the CMOS device, a source contact to the source of the CMOS device, and a drain contact to the drain of the CMOS device. The frontside contact is located on the frontside of the device, while the source and drain contacts are located on the backside.

• The patent application is for a CMOS device with a hybrid cross-couple contact.
• The hybrid cross-couple contact includes a frontside contact, a source contact, and a drain contact.
• The frontside contact is connected to the gate of the CMOS device and is located on the frontside of the device.
• The source contact is connected to the source of the CMOS device and is located on the backside of the device.
• The drain contact is connected to the drain of the CMOS device and is also located on the backside of the device.

Potential Applications

• This technology can be used in the manufacturing of CMOS devices.
• It can be applied in various electronic devices that utilize CMOS technology, such as smartphones, computers, and other consumer electronics.

Problems Solved

• The hybrid cross-couple contact solves the problem of connecting the gate, source, and drain of a CMOS device efficiently.
• It provides a simplified and compact design for the CMOS device.

Benefits

• The hybrid cross-couple contact allows for improved performance and functionality of CMOS devices.
• It enables better integration and miniaturization of electronic devices.
• The frontside contact and backside contacts provide a more efficient and effective connection for the CMOS device.

Original Abstract Submitted

Embodiments are disclosed for a complementary metal oxide semiconductor (CMOS) device. The CMOS device includes a hybrid cross-couple contact. The hybrid cross-couple contact includes a frontside contact to a gate of the CMOS device. The frontside contact is disposed on a frontside of the CMOS device. The hybrid cross-couple contact includes a source contact to a source of the CMOS device. The source contact is disposed on a backside of the CMOS device. The hybrid cross-couple contact includes a drain contact to a drain of the CMOS device. The drain contact is disposed on a backside of the CMOS device.