17946740. VIA RESISTANCE TO BACKSIDE POWER RAIL simplified abstract (International Business Machines Corporation)

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VIA RESISTANCE TO BACKSIDE POWER RAIL

Organization Name

International Business Machines Corporation

Inventor(s)

Tao Li of Slingerlands NY (US)

Sagarika Mukesh of ALBANY NY (US)

Liqiao Qin of ALBANY NY (US)

Prabudhya Roy Chowdhury of ALBANY NY (US)

Kisik Choi of Watervliet NY (US)

Ruilong Xie of Niskayuna NY (US)

VIA RESISTANCE TO BACKSIDE POWER RAIL - A simplified explanation of the abstract

This abstract first appeared for US patent application 17946740 titled 'VIA RESISTANCE TO BACKSIDE POWER RAIL

Simplified Explanation

The semiconductor device described in the abstract includes a backside power rail, a transistor source/drain structure with a backside facing the backside power rail, and a via connecting the backside power rail and the source/drain structure. The via has a buried portion between the backside power rail and the backside of the source/drain structure, a side portion along a vertical side of the structure, and a top portion covering part of the frontside of the structure.

  • Backside power rail
  • Transistor source/drain structure
  • Via connecting backside power rail and source/drain structure
  • Buried portion of the via overlaps and contacts the backside of the source/drain structure
  • Side portion of the via along a vertical side of the structure
  • Top portion of the via covering part of the frontside of the structure

Potential Applications

This technology could be applied in:

  • Semiconductor devices
  • Integrated circuits
  • Power management systems

Problems Solved

  • Efficient power distribution
  • Improved electrical connections
  • Enhanced performance of semiconductor devices

Benefits

  • Increased reliability
  • Enhanced power efficiency
  • Better overall device performance

Potential Commercial Applications

Optimizing Semiconductor Device Power Distribution for Improved Performance

Possible Prior Art

Prior art in semiconductor device manufacturing processes involving power distribution and electrical connections.

Unanswered Questions

How does this technology impact the overall cost of semiconductor device production?

The abstract does not provide information on the cost implications of implementing this technology in semiconductor devices.

What specific types of semiconductor devices can benefit the most from this innovation?

The abstract does not specify which types of semiconductor devices would see the greatest improvements from this technology.


Original Abstract Submitted

A semiconductor device includes a backside power rail; a transistor source/drain structure that has a backside facing the backside power rail and has a frontside facing away from the backside power rail; and a via disposed between and electrically connecting the backside power rail and the source/drain structure. The via includes a buried portion that is disposed between the backside power rail and the backside of the transistor source/drain structure. A part of the buried portion overlaps and contacts at least a part of the backside of the source/drain structure. The via also includes a side portion that is electrically connected with the buried portion and extends along a vertical side of the source/drain structure between the frontside and the backside; and a top portion that is electrically connected with the side portion and covers at least a part of the frontside of the source/drain structure.