18045181. FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE simplified abstract (International Business Machines Corporation)

FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE

Organization Name

International Business Machines Corporation

Inventor(s)

Chen Zhang of Guilderland NY (US)

Ruilong Xie of Niskayuna NY (US)

Shogo Mochizuki of Mechanicville NY (US)

Tenko Yamashita of Schenectady NY (US)

FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18045181 titled 'FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE

Simplified Explanation

The semiconductor structure described in the abstract consists of a first nanosheet transistor with a first source/drain (S/D) region, and a second nanosheet transistor stacked on top of the first one with a second S/D region separated by a dielectric cap layer. The first S/D region of the first nanosheet transistor has a flat top surface adjacent to the dielectric cap layer and at least one vertical edge aligned with an edge of the dielectric cap layer.

• The semiconductor structure includes a first nanosheet transistor with a first S/D region and a second nanosheet transistor with a second S/D region separated by a dielectric cap layer.
• The first S/D region of the first nanosheet transistor has a flat top surface adjacent to the dielectric cap layer and aligned vertical edges with the dielectric cap layer.

Potential Applications

This semiconductor structure could be used in:

• Advanced electronic devices
• High-performance computing systems
• Nanotechnology research

Problems Solved

This technology helps address:

• Improving transistor performance
• Enhancing integration density
• Reducing power consumption in electronic devices

Benefits

The benefits of this technology include:

• Increased efficiency in electronic devices
• Enhanced speed and performance
• Potential for smaller and more powerful devices

Potential Commercial Applications

This technology could be applied in:

• Semiconductor manufacturing industry
• Consumer electronics market
• Research and development in nanotechnology

Possible Prior Art

One possible prior art for this technology could be the development of nanosheet transistors with dielectric cap layers in the semiconductor industry.

Unanswered Questions

How does this semiconductor structure compare to traditional transistor designs?

The article does not provide a direct comparison between this semiconductor structure and traditional transistor designs in terms of performance, efficiency, or other key metrics.

What are the specific manufacturing processes involved in creating this semiconductor structure?

The article does not detail the specific steps and techniques used in manufacturing this semiconductor structure, such as deposition methods, etching processes, or material compositions.

Original Abstract Submitted

Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a first nanosheet transistor having a first source/drain (S/D) region; and a second nanosheet transistor on top of the first nanosheet transistor, the second nanosheet transistor having a second S/D region, the second S/D region being separated from the first S/D region by a dielectric cap layer, wherein the first S/D region of the first nanosheet transistor has a substantially flat top surface adjacent to the dielectric cap layer and has at least one vertical edge that is substantially aligned with an edge of the dielectric cap layer. A method of manufacturing the semiconductor structure is also provided.