17545501. CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVICES ON A SUBSTRATE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVICES ON A SUBSTRATE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Julien Frougier of Albany NY (US)

Sagarika Mukesh of ALBANY NY (US)

Anthony I. Chou of Guilderland NY (US)

Andrew M. Greene of Slingerlands NY (US)

Ruilong Xie of Niskayuna NY (US)

Veeraraghavan S. Basker of Schenectady NY (US)

Junli Wang of Slingerlands NY (US)

Effendi Leobandung of Stormville NY (US)

Jingyun Zhang of Albany NY (US)

Nicolas Loubet of GUILDERLAND NY (US)

CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVICES ON A SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17545501 titled 'CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVICES ON A SUBSTRATE

Simplified Explanation

The abstract describes a semiconductor device that includes a first field effect device and an electrostatic discharge device on different regions of a substrate. The electrostatic discharge device has a separate gate structure and a source/drain that is in contact with the substrate and doped with a different dopant type.

• The semiconductor device includes a first field effect device and an electrostatic discharge device on different regions of a substrate.
• The electrostatic discharge device has a separate gate structure and a source/drain that is in contact with the substrate.
• The source/drain of the electrostatic discharge device is doped with a different dopant type.

Potential applications of this technology:

• Electronics industry
• Semiconductor manufacturing
• Integrated circuits

Problems solved by this technology:

• Protection against electrostatic discharge
• Improved performance and reliability of semiconductor devices

Benefits of this technology:

• Enhanced protection against electrostatic discharge events
• Improved performance and reliability of semiconductor devices
• Simplified design and manufacturing process

Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes a first field effect device on a first region of a substrate, wherein a first gate structure and an electrostatic discharge device on a second region of the substrate, wherein a second gate structure for the electrostatic discharge device is separated from the substrate by the bottom dielectric layer, and a second source/drain for the electrostatic discharge device is in electrical contact with the substrate, wherein the second source/drain is doped with a second dopant type.