17961774. HIGH DENSITY TRENCH CAPACITOR simplified abstract (International Business Machines Corporation)
Contents
- 1 HIGH DENSITY TRENCH CAPACITOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HIGH DENSITY TRENCH CAPACITOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
HIGH DENSITY TRENCH CAPACITOR
Organization Name
International Business Machines Corporation
Inventor(s)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
Kangguo Cheng of Schenectady NY (US)
Chanro Park of Clifton Park NY (US)
Min Gyu Sung of Latham NY (US)
HIGH DENSITY TRENCH CAPACITOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17961774 titled 'HIGH DENSITY TRENCH CAPACITOR
Simplified Explanation
The semiconductor structure described in the abstract includes a capacitor structure with first and second electrode layers separated by a dielectric layer, all partially disposed in a trench of an interlayer dielectric layer. A spacer is also present on the first electrode layer, with a contact connected to the second electrode layer and the spacer in the trench.
- The semiconductor structure includes a capacitor structure with first and second electrode layers.
- The capacitor structure is at least partially disposed in a trench of an interlayer dielectric layer.
- The first electrode layer's top surface is below the top surface of the second electrode layer and the dielectric layer.
- A spacer is present on the first electrode layer.
- A contact is connected to the second electrode layer and the spacer in the trench.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Integrated circuits
- Electronic devices
Problems Solved
This technology helps in:
- Improving capacitor structure efficiency
- Enhancing semiconductor performance
- Reducing space requirements in electronic devices
Benefits
The benefits of this technology include:
- Increased capacitance
- Improved signal processing
- Enhanced device reliability
Potential Commercial Applications
A potential commercial application for this technology could be:
- Advanced memory devices for consumer electronics
Possible Prior Art
One possible prior art for this technology could be:
- Capacitor structures in semiconductor devices
Unanswered Questions
How does this technology impact overall semiconductor performance?
This technology can potentially improve semiconductor performance by enhancing the efficiency of the capacitor structure.
What are the specific electronic devices that could benefit from this innovation?
Electronic devices such as smartphones, tablets, and computers could benefit from the improved performance and reliability offered by this technology.
Original Abstract Submitted
A semiconductor structure includes a capacitor structure at least partially disposed in a trench of an interlayer dielectric layer. The capacitor structure includes first and second electrode layers separated by a dielectric layer. A top surface of the first electrode layer is below a top surface of the second electrode layer and the dielectric layer. A spacer is disposed on the first electrode layer and a contact is disposed in the trench and connected to the second electrode layer and the spacer.
