17944437. BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Kisik Choi of Watervliet NY (US)

Brent A. Anderson of Jericho VT (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 17944437 titled 'BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT

Simplified Explanation

The semiconductor device described in the patent application features a source/drain with specific dimensions and a full wrap-around contact that surrounds a portion of the source/drain.

• The full wrap-around contact includes a frontside recessed wrap-around contact from the front side of the source/drain.
• Additionally, there is a backside conductive contact from the back side of the source/drain.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.

Problems Solved

This innovation helps improve the electrical connectivity and performance of semiconductor devices by providing a more efficient and reliable contact structure.

Benefits

The full wrap-around contact design enhances the overall functionality and durability of the semiconductor device, leading to improved performance and longevity.

Potential Commercial Applications

Optimizing Contact Structures for Enhanced Semiconductor Devices

Original Abstract Submitted

A semiconductor device having a source/drain having a height, a length, and a width. A full wrap-around contact surrounds a partial length of the source/drain. The full wrap-around contact includes a frontside recessed wrap-around contact from a front side of the source/drain and a backside conductive contact from a back side of the source/drain.