International business machines corporation (20240128334). SEMICONDUCTOR STRUCTURE WITH WRAPPED-AROUND BACKSIDE CONTACT simplified abstract

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SEMICONDUCTOR STRUCTURE WITH WRAPPED-AROUND BACKSIDE CONTACT

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Chanro Park of Clifton Park NY (US)

Min Gyu Sung of Latham NY (US)

Kangguo Cheng of Schenectady NY (US)

Julien Frougier of Albany NY (US)

SEMICONDUCTOR STRUCTURE WITH WRAPPED-AROUND BACKSIDE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128334 titled 'SEMICONDUCTOR STRUCTURE WITH WRAPPED-AROUND BACKSIDE CONTACT

Simplified Explanation

The semiconductor structure described in the patent application includes a backside contact that is wrapped around an unmerged source/drain region.

  • The backside contact in the semiconductor structure is designed to improve the electrical connection and performance of the device.
  • The unmerged source/drain region allows for better control and efficiency in the flow of current within the semiconductor structure.

Potential Applications

This technology could be applied in:

  • Integrated circuits
  • Power electronics
  • Semiconductor devices

Problems Solved

This technology helps to address issues related to:

  • Electrical performance
  • Current flow control
  • Device efficiency

Benefits

The benefits of this technology include:

  • Improved electrical connection
  • Enhanced device performance
  • Better current flow control

Potential Commercial Applications

This technology could be commercially applied in:

  • Consumer electronics
  • Automotive industry
  • Telecommunications sector

Possible Prior Art

One possible prior art could be the use of backside contacts in semiconductor devices to improve electrical connections and performance.

Unanswered Questions

How does this technology compare to existing backside contact designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing backside contact designs to evaluate its performance and efficiency.

What specific semiconductor devices or applications would benefit the most from this technology?

The article does not specify which semiconductor devices or applications would see the most significant benefits from implementing this technology.


Original Abstract Submitted

a semiconductor structure includes a backside contact, and an unmerged source/drain region. the backside contact is wrapped-around the unmerged source/drain region.