International business machines corporation (20240121966). MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS simplified abstract

MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS

Organization Name

international business machines corporation

Inventor(s)

Julien Frougier of Albany NY (US)

Kangguo Cheng of Schenectady NY (US)

Ruilong Xie of Niskayuna NY (US)

Chanro Park of Clifton Park NY (US)

Min Gyu Sung of Latham NY (US)

MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240121966 titled 'MULTI-STATE FERROELECTRIC-RAM WITH STACKED CAPACITORS

Simplified Explanation

The memory device described in the patent application includes vertically stacked ferroelectric capacitors on a substrate, with different capacitive outputs based on a constant voltage applied. The first and second ferroelectric capacitors have different electrode configurations, allowing for varied electric field outputs and producing different output signals based on threshold voltage levels.

• The memory device includes vertically stacked ferroelectric capacitors on a substrate.
• The first and second ferroelectric capacitors have different capacitive outputs when a constant voltage is applied.
• Different electrode configurations in the capacitors allow for varied electric field outputs.
• The capacitive output for each capacitor can produce different electric field outputs.
• Different threshold voltage levels for each capacitor contribute to the overall output signals.

Potential Applications

This technology could be applied in memory devices, data storage systems, and electronic devices requiring precise and varied output signals.

Problems Solved

This technology solves the problem of limited output signals in memory devices, allowing for more diverse and customizable electric field outputs.

Benefits

The benefits of this technology include improved memory device performance, increased data storage capabilities, and enhanced functionality in electronic devices.

Potential Commercial Applications

The potential commercial applications of this technology include memory chip manufacturing, data storage solutions, and electronic device production.

Possible Prior Art

One possible prior art for this technology could be the use of ferroelectric capacitors in memory devices with varying electrode configurations to achieve different output signals.

How does this technology compare to traditional memory devices in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and traditional memory devices in terms of performance and efficiency.

What are the potential challenges in implementing this technology on a larger scale for commercial production?

This article does not address the potential challenges in implementing this technology on a larger scale for commercial production.

Original Abstract Submitted

a memory device includes a substrate and vertically stacked ferroelectric capacitors formed on the substrate. a first ferroelectric capacitor has a different capacitive output than a second ferroelectric capacitor when a constant voltage is applied. first and second electrodes are in electrical contact with the vertically stacked ferroelectric capacitors. in some instances, a first capacitor plate in the first ferroelectric capacitor and a second capacitor plate in the second ferroelectric capacitor have different thicknesses. the different thicknesses allow the capacitive output for each capacitor to produce different electric field outputs. accordingly, a combination of different output signals can be produced based on different threshold voltage levels for each capacitor contributing to the output.