International business machines corporation (20240105612). BACKSIDE POWER DISTRIBUTION NETWORK AND BACKSIDE SINGLE CRYSTAL TRANSISTORS simplified abstract

BACKSIDE POWER DISTRIBUTION NETWORK AND BACKSIDE SINGLE CRYSTAL TRANSISTORS

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Nicholas Alexander Polomoff of Hopewell Junction NY (US)

Brent A. Anderson of Jericho VT (US)

Chih-Chao Yang of Glenmont NY (US)

BACKSIDE POWER DISTRIBUTION NETWORK AND BACKSIDE SINGLE CRYSTAL TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105612 titled 'BACKSIDE POWER DISTRIBUTION NETWORK AND BACKSIDE SINGLE CRYSTAL TRANSISTORS

Simplified Explanation

The semiconductor structure described in the abstract includes a device layer with active devices, back-end-of-line components, a power distribution network (PDN), backside transistors on a single crystal silicon (Si) layer, through silicon vias (TSVs), and upper TSVs for additional interconnects.

• Device layer with active devices
• Back-end-of-line components under the device layer
• Power distribution network (PDN) over the device layer
• Backside transistors on a single crystal Si layer
• Through silicon vias (TSVs) extending through the backside transistors and the back-end-of-line
• Upper TSVs extending from the PDN through the backside transistors to additional interconnects

Potential Applications

The technology described in this patent application could be applied in:

• High-performance computing
• Advanced telecommunications systems
• Power electronics

Problems Solved

This technology helps address the following issues:

• Improved power distribution efficiency
• Enhanced performance of active devices
• Increased integration density

Benefits

The semiconductor structure offers the following benefits:

• Higher speed and efficiency in data processing
• Enhanced reliability and durability
• Reduced power consumption

Potential Commercial Applications

The technology could find commercial applications in:

• Data centers
• Telecommunications infrastructure
• Automotive electronics

Possible Prior Art

One possible prior art for this technology could be the use of through silicon vias in semiconductor structures for improved interconnectivity and performance.

How does this technology compare to existing power distribution methods in semiconductor structures?

This article does not provide a direct comparison between this technology and traditional power distribution methods in semiconductor structures. Further research or a comparative analysis would be needed to address this question.

What are the potential challenges in implementing this semiconductor structure on a large scale?

The article does not discuss the potential challenges in scaling up the implementation of this semiconductor structure. Factors such as manufacturing complexity, cost implications, and compatibility with existing systems could be important considerations in large-scale deployment.

Original Abstract Submitted

a semiconductor structure is presented including a device layer having a plurality of active devices, back-end-of-line (beol) components disposed under the device layer, a power distribution network (pdn) disposed over the device layer, and backside transistors disposed on a single crystal silicon (si) layer disposed over the pdn. a through silicon via (tsv) extends from the backside transistors disposed on the single crystal si layer through the beol. an upper tsv (utsv) extends from the pdn through the backside transistors disposed on the single crystal si layer to additional interconnects.