17545713. NANOSHEET DEVICE WITH AIR-GAPED SOURCE/DRAIN REGIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
NANOSHEET DEVICE WITH AIR-GAPED SOURCE/DRAIN REGIONS
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Kangguo Cheng of Schenectady NY (US)
Ruilong Xie of Niskayuna NY (US)
NANOSHEET DEVICE WITH AIR-GAPED SOURCE/DRAIN REGIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17545713 titled 'NANOSHEET DEVICE WITH AIR-GAPED SOURCE/DRAIN REGIONS
Simplified Explanation
Abstract: A nanosheet device is provided that has high quality epitaxially grown source/drain regions and reduced parasitic capacitance which are afforded by forming an air gap between an epitaxially grown source/drain region and a semiconductor substrate. The isolation provided by the air gap does not need to extend beneath the channel region of the nanosheet device.
Patent/Innovation Explanation:
- Nanosheet device with high quality epitaxially grown source/drain regions and reduced parasitic capacitance.
- Air gap is formed between the epitaxially grown source/drain region and the semiconductor substrate.
- The air gap provides isolation without extending beneath the channel region of the nanosheet device.
Potential Applications:
- Semiconductor industry
- Electronics manufacturing
- Integrated circuits
Problems Solved:
- High quality epitaxially grown source/drain regions
- Reduced parasitic capacitance
- Isolation without extending beneath the channel region
Benefits:
- Improved performance of nanosheet devices
- Enhanced efficiency of semiconductor devices
- Reduced interference and capacitance issues
Original Abstract Submitted
A nanosheet device is provided that has high quality epitaxially grown source/drain regions and reduced parasitic capacitance which are afforded by forming an air gap between an epitaxially grown source/drain region and a semiconductor substrate. The isolation provided by the air gap does not need to extend beneath the channel region of the nanosheet device.
