17837434. SKIP-LEVEL TSV WITH HYBRID DIELECTRIC SCHEME FOR BACKSIDE POWER DELIVERY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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SKIP-LEVEL TSV WITH HYBRID DIELECTRIC SCHEME FOR BACKSIDE POWER DELIVERY

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Ruilong Xie of Niskayuna NY (US)

Huai Huang of Clifton Park NY (US)

Hosadurga Shobha of Niskayuna NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

SKIP-LEVEL TSV WITH HYBRID DIELECTRIC SCHEME FOR BACKSIDE POWER DELIVERY - A simplified explanation of the abstract

This abstract first appeared for US patent application 17837434 titled 'SKIP-LEVEL TSV WITH HYBRID DIELECTRIC SCHEME FOR BACKSIDE POWER DELIVERY

Simplified Explanation

The abstract describes a skip-level through-silicon via structure that allows for low resistance via connection for backside power distribution. This structure skips one or more intermediate backside metal layers, providing greater design flexibility for power grid. It has a larger size compared to conventional through-silicon via structures, resulting in lower through-silicon via resistance.

  • Skip-level through-silicon via structure enables low resistance via connection for backside power distribution.
  • It skips one or more intermediate backside metal layers, providing greater design flexibility for power grid.
  • The structure has a larger size, resulting in lower through-silicon via resistance compared to conventional structures.

Potential Applications

This technology can be applied in various fields where efficient power distribution is required, such as:

  • Integrated circuits
  • Microprocessors
  • Power electronics
  • Data centers

Problems Solved

The skip-level through-silicon via structure addresses the following problems:

  • High resistance in via connections for backside power distribution
  • Limited design flexibility for power grid
  • Inefficient power distribution in integrated circuits and microprocessors

Benefits

The benefits of the skip-level through-silicon via structure include:

  • Low resistance via connection for efficient power distribution
  • Greater design flexibility for power grid
  • Improved power distribution in integrated circuits and microprocessors
  • Enhanced performance and reliability of power electronics and data centers


Original Abstract Submitted

A skip-level through-silicon via structure is provided that enables low resistance via connection for backside power distribution by skipping one or more intermediate backside metal layers. The skip-level through-silicon via structure can enable a greater design flexibility for power grid. The skip-level through-silicon via structure has a large size that provides lower through-silicon via resistance as compared with conventional through-silicon via structures.

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