17524541. GATE CUT SUBSEQUENT TO REPLACEMENT GATE simplified abstract (International Business Machines Corporation)

GATE CUT SUBSEQUENT TO REPLACEMENT GATE

Organization Name

International Business Machines Corporation

Inventor(s)

CHANRO Park of CLIFTON PARK NY (US)

Andrew M. Greene of Slingerlands NY (US)

Andrew Gaul of Halfmoon NY (US)

Ruilong Xie of Niskayuna NY (US)

GATE CUT SUBSEQUENT TO REPLACEMENT GATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17524541 titled 'GATE CUT SUBSEQUENT TO REPLACEMENT GATE

Simplified Explanation

The patent application describes a semiconductor device with two gates on a semiconductor substrate, separated by a gate cut dielectric. The gates have gate caps on their top surfaces, and a gate cut multilayer structure is present between the gate caps. The multilayer structure consists of a dielectric sandwiched between two vertical spacers. The sidewalls of the multilayer structure align with the ends of the gates.

• The semiconductor device has two gates on a semiconductor substrate.
• The gates are separated by a gate cut dielectric.
• Gate caps are present on the top surfaces of the gates.
• A gate cut multilayer structure is located between the gate caps.
• The multilayer structure consists of a dielectric and two vertical spacers.
• The sidewalls of the multilayer structure align with the ends of the gates.

Potential Applications

• This semiconductor device can be used in various electronic devices and systems.
• It can be applied in integrated circuits, microprocessors, and memory devices.
• The device's structure can enhance the performance and efficiency of these electronic systems.

Problems Solved

• The gate cut dielectric and multilayer structure help to improve the isolation between the two gates.
• The alignment of the sidewalls with the ends of the gates ensures precise control and operation of the device.
• The structure addresses issues related to gate leakage and cross-talk between the gates.

Benefits

• The device provides improved isolation between the gates, leading to better overall performance.
• The gate cut dielectric and multilayer structure enhance the reliability and stability of the semiconductor device.
• The precise alignment of the sidewalls with the ends of the gates ensures accurate control and operation of the device.

Original Abstract Submitted

A semiconductor device includes a first gate upon a semiconductor substrate and a second gate upon the semiconductor substrate in line with the first gate. A gate cut dielectric is between the first gate and the second gate. A first gate cap is upon a top surface of the first gate and a second gate cap is upon a top surface of the second gate. A gate cut multilayer structure is between the first gate cap and the second gate cap. The gate cut multilayer structure includes a dielectric between a first substantially vertical spacer and a second substantially vertical spacer. A first sidewall of the multilayer structure is coplanar with an end of the first gate and a second opposing sidewall of the multilayer structure is coplanar with an end of the second gate.