17545485. MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Heng Wu of Guilderland NY (US)

Pouya Hashemi of Purchase NY (US)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17545485 titled 'MAGNETIC TUNNEL JUNCTION PILLAR FORMATION FOR MRAM DEVICE

Simplified Explanation

The abstract describes a method of manufacturing a magnetic random access memory (MRAM) device. Here is a simplified explanation of the patent application:

  • The method begins by forming a magnetic tunnel junction (MTJ) stack on a substrate.
  • A hardmask layer is then formed on top of the MTJ stack.
  • Etch pattern pads are created on the hardmask layer.
  • Spacers are formed on the sides of the etch pattern pads, creating first openings that expose the hardmask layer.
  • The MTJ stack is patterned using a first etch, utilizing the first openings to form multiple MTJ pillars separated by first vias.
  • The first vias are filled with a first dielectric material.
  • The spacers are removed from the etch pattern pads, resulting in the formation of second openings between the first dielectric material and the etch pattern pads.
  • The multiple MTJ pillars are further patterned using a second etch, utilizing the second openings to form second MTJ pillars separated by second vias.
  • The second vias are filled with a second dielectric material, effectively encapsulating the multiple second MTJ pillars.

Potential applications of this technology:

  • Magnetic random access memory (MRAM) devices can be used in various electronic devices, such as computers, smartphones, and IoT devices.
  • MRAM offers non-volatile memory storage, high-speed read and write operations, and low power consumption, making it suitable for applications that require fast and reliable data storage.

Problems solved by this technology:

  • The method provides a reliable and efficient way to manufacture MRAM devices with multiple MTJ pillars.
  • The use of spacers and etch pattern pads allows for precise patterning and separation of the MTJ pillars, ensuring proper functionality of the MRAM device.

Benefits of this technology:

  • The method enables the production of MRAM devices with high storage density and improved performance.
  • The encapsulation of the MTJ pillars with dielectric materials enhances their stability and reliability.
  • The manufacturing process is compatible with existing semiconductor fabrication techniques, making it easier to integrate MRAM technology into existing electronic devices.


Original Abstract Submitted

A method of manufacturing an MRAM device includes forming an MTJ stack on a substrate, forming a hardmask layer on the MTJ stack, forming etch pattern pads on the hardmask, forming a spacer on the sides of the etch pattern pads to form first openings exposing the hardmask, patterning the MTJ stack by a first etch using the first openings to form a plurality of first MTJ pillars separated by first vias, filling the first vias with a first dielectric, removing the spacers from the etch pattern pads to form a plurality of second openings between the first dielectric and the etch pattern pads, patterning the plurality of first MTJ pillars by a second etch using the second openings to form a plurality of second MTJ pillars separated by second vias and filling the second vias with a second dielectric to encapsulate the plurality of second MTJ pillars.

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