17936825. METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN simplified abstract (International Business Machines Corporation)
Contents
- 1 METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN
Organization Name
International Business Machines Corporation
Inventor(s)
Tao Li of Slingerlands NY (US)
Ruilong Xie of Niskayuna NY (US)
Kisik Choi of Watervliet NY (US)
METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN - A simplified explanation of the abstract
This abstract first appeared for US patent application 17936825 titled 'METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN
Simplified Explanation
The semiconductor device described in the abstract includes power rails formed in the backside of a wafer, with connections made through via-to-backside power rail (VBPR) contacts. The VBPR gate contact overlaps a gate cut region between two transistors on the wafer.
- Power rails formed in the backside of a wafer
- Connections made through via-to-backside power rail (VBPR) contacts
- VBPR gate contact overlaps gate cut region between transistors
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This innovation helps in improving the efficiency and performance of semiconductor devices by providing a more direct and efficient power connection.
Benefits
The use of power rails in the backside of the wafer can lead to better power distribution, reduced resistance, and improved overall device performance.
Potential Commercial Applications
"Enhancing Semiconductor Device Performance with Backside Power Rails"
Possible Prior Art
Prior art may include similar techniques used in the semiconductor industry to improve power distribution and connectivity within devices.
Unanswered Questions
How does this technology compare to traditional front-side power rail connections in terms of performance and efficiency?
This article does not provide a direct comparison between backside power rails and traditional front-side power rail connections.
What are the potential challenges or limitations of implementing backside power rails in semiconductor devices?
The article does not address any potential challenges or limitations that may arise from the implementation of backside power rails.
Original Abstract Submitted
A semiconductor device includes power rails formed in a backside of a wafer. A gate of a first transistor on the wafer is connected to a power rail through a via-to-backside power rail (VBPR) gate contact. A source/drain (S/D) region of a second transistor on the wafer is connected to a power rail through a VBPR S/D contact. The VBPR gate contact partially vertically overlaps a gate cut region between the first transistor and the second transistor.
