17957194. HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract (International Business Machines Corporation)
Contents
- 1 HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE
Organization Name
International Business Machines Corporation
Inventor(s)
Julien Frougier of Albany NY (US)
Ruilong Xie of Niskayuna NY (US)
Kangguo Cheng of Schenectady NY (US)
Andrew M. Greene of Slingerlands NY (US)
Sung Dae Suk of Watervliet NY (US)
HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17957194 titled 'HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a channel region of stacked semiconductor layers arranged in clusters, with each cluster consisting of a pair of semiconductor sheets separated by a dielectric material. A gate structure encapsulates the channel region, and source and drain regions are located on opposite sides of the channel region.
- Stacked semiconductor layers arranged in clusters
- Pair of semiconductor sheets with dielectric material in between
- Gate structure encapsulating the channel region
- Source and drain regions on opposing sides of the channel region
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits, sensors, and memory devices.
Problems Solved
This technology addresses the need for improved performance and efficiency in semiconductor devices by utilizing stacked semiconductor layers arranged in clusters, which can enhance device functionality and reliability.
Benefits
The use of stacked semiconductor layers in clusters can lead to increased device performance, reduced power consumption, and improved scalability for future semiconductor technologies.
Potential Commercial Applications
- Advanced integrated circuits
- High-performance sensors
- Next-generation memory devices
Possible Prior Art
One possible prior art in this field could be the use of traditional planar semiconductor structures in semiconductor devices, which may not offer the same level of performance and efficiency as the stacked semiconductor layers arranged in clusters described in this patent application.
=== What are the specific materials used in the dielectric material between the semiconductor sheets? The abstract does not specify the exact materials used in the dielectric material between the semiconductor sheets.
=== How does the gate structure enhance the performance of the semiconductor device? The abstract does not provide detailed information on how the gate structure encapsulating the channel region of stacked semiconductor sheets arranged in clusters enhances the performance of the semiconductor device.
Original Abstract Submitted
A semiconductor device including a channel region of stacked semiconductor layers arranged in at least one cluster, wherein each cluster includes a pair of the semiconductor sheets with a dielectric material present therebetween. The semiconductor device further includes a gate structure encapsulating the channel region of stacked semiconductor sheets arranged in clusters. Source and drain regions are present on opposing sides of the channel region.
