International business machines corporation (20240113021). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract
Contents
- 1 VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY
Organization Name
international business machines corporation
Inventor(s)
Brent A. Anderson of Jericho VT (US)
Albert M. Chu of Nashua NH (US)
Ruilong Xie of Niskayuna NY (US)
Junli Wang of Slingerlands NY (US)
VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113021 titled 'VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY
Simplified Explanation
The abstract describes a patent application for a technology involving Vertical Tunneling Field Effect Transistors (VTFETs) on a wafer with a shared frontside contact and a backside power delivery network.
- VTFETs are provided on a wafer.
- A backside power delivery network is located on the backside of the wafer.
- A shared frontside contact is present on the frontside of the wafer.
- The shared frontside contact is connected to the top source/drain regions of the VTFETs and the backside power delivery network.
Potential Applications
The technology could be applied in:
- Power electronics
- Integrated circuits
- Semiconductor devices
Problems Solved
This technology helps in:
- Improving power delivery efficiency
- Enhancing device performance
- Reducing manufacturing complexity
Benefits
The technology offers benefits such as:
- Higher power efficiency
- Enhanced device reliability
- Simplified manufacturing processes
Potential Commercial Applications
The technology could find use in:
- Consumer electronics
- Automotive industry
- Telecommunications sector
Possible Prior Art
One possible prior art could be the use of shared contacts in semiconductor devices to improve efficiency and reduce complexity.
Unanswered Questions
The shared frontside contact allows for a more efficient power delivery network, but the specific impact on the performance metrics of the VTFETs is not detailed in the abstract.
What are the specific design considerations for integrating the backside power delivery network with the VTFETs?
While the abstract mentions the presence of a backside power delivery network, it does not elaborate on the design considerations or challenges involved in integrating this network with the VTFETs on the wafer.
Original Abstract Submitted
a first vtfet is provided on a wafer. a second vtfet is adjacent to the first vtfet on the wafer. a backside power deliver network is on a backside of the wafer. a shared frontside contact is on a frontside of the wafer. the shared frontside contact is connected to a first top source/drain region of the first vtfet, a second top source/drain region of the second vtfet, and the backside power delivery network.
