International business machines corporation (20240114699). BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract

BACKSIDE MRAM WITH FRONTSIDE DEVICES

Organization Name

international business machines corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Theodorus E. Standaert of Clifton Park NY (US)

Junli Wang of Slingerlands NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Albert M. Chu of Nashua NH (US)

Ruilong Xie of Niskayuna NY (US)

BACKSIDE MRAM WITH FRONTSIDE DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240114699 titled 'BACKSIDE MRAM WITH FRONTSIDE DEVICES

Simplified Explanation

The abstract of the patent application describes semiconductor devices and methods of forming the same, including front-end-of-line (FEOL) and back-end-of-line (BEOL) layers with transistor devices and electrical connections.

• The patent application involves a semiconductor device with a front-end-of-line (FEOL) layer containing a first transistor device.
• A first back-end-of-line (BEOL) layer is located on the front side of the FEOL layer and includes a first electrical connection to the first transistor device.
• A second BEOL layer is on the back side of the FEOL layer and includes a first BEOL device with a second electrical connection to the first transistor device.

Potential Applications

The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by providing optimized electrical connections between different components.

Benefits

The benefits of this technology include enhanced functionality, increased speed, and reduced power consumption in semiconductor devices.

Potential Commercial Applications

The technology has potential commercial applications in the electronics industry for developing high-performance computing devices, mobile devices, and other advanced electronic products.

Possible Prior Art

One possible prior art could be the use of similar FEOL and BEOL layers in the manufacturing of semiconductor devices to improve performance and connectivity.

Unanswered Questions

How does this technology compare to existing methods of forming semiconductor devices?

This article does not provide a direct comparison between this technology and existing methods in the semiconductor industry.

What specific materials and processes are used in implementing the FEOL and BEOL layers described in the patent application?

The article does not delve into the specific materials and processes involved in implementing the FEOL and BEOL layers.

Original Abstract Submitted

semiconductor devices and methods of forming the same include a front-end-of-line (feol) layer that includes a first transistor device. a first back-end-of-line (beol) layer is on a front side of the feol layer and includes a first electrical connection to the first transistor device. a second beol layer is on a back side of the feol layer and includes a first beol device with a second electrical connection to the first transistor device.