17956244. BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract (International Business Machines Corporation)

BACKSIDE MRAM WITH FRONTSIDE DEVICES

Organization Name

International Business Machines Corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Theodorus E. Standaert of Clifton Park NY (US)

Junli Wang of Slingerlands NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Albert M. Chu of Nashua NH (US)

Ruilong Xie of Niskayuna NY (US)

BACKSIDE MRAM WITH FRONTSIDE DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17956244 titled 'BACKSIDE MRAM WITH FRONTSIDE DEVICES

Simplified Explanation

The patent application describes semiconductor devices and methods of forming them, including a front-end-of-line (FEOL) layer with a first transistor device, a first back-end-of-line (BEOL) layer on the front side of the FEOL layer with a first electrical connection to the first transistor device, and a second BEOL layer on the back side of the FEOL layer with a first BEOL device and a second electrical connection to the first transistor device.

• FEOL layer with first transistor device
• First BEOL layer with first electrical connection to first transistor device
• Second BEOL layer with first BEOL device and second electrical connection to first transistor device

Potential Applications

The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and automotive systems.

Problems Solved

This technology solves the problem of integrating multiple layers of semiconductor devices efficiently and effectively, allowing for improved performance and functionality in electronic devices.

Benefits

The benefits of this technology include increased device density, improved electrical connections, and enhanced overall performance of semiconductor devices.

Potential Commercial Applications

The technology has potential commercial applications in the semiconductor industry for the production of high-performance electronic devices with advanced functionalities.

Possible Prior Art

One possible prior art in this field is the use of multi-layer semiconductor devices with integrated electrical connections, but the specific configuration and arrangement described in this patent application may be novel and inventive.

Unanswered Questions

How does this technology impact the power consumption of electronic devices?

The article does not provide information on how this technology affects the power consumption of electronic devices. This could be an important factor for potential applications in battery-powered devices.

Are there any limitations to the scalability of this technology for mass production?

The article does not address any potential limitations or challenges related to scaling up this technology for mass production. Understanding these factors could be crucial for its commercial viability.

Original Abstract Submitted

Semiconductor devices and methods of forming the same include a front-end-of-line (FEOL) layer that includes a first transistor device. A first back-end-of-line (BEOL) layer is on a front side of the FEOL layer and includes a first electrical connection to the first transistor device. A second BEOL layer is on a back side of the FEOL layer and includes a first BEOL device with a second electrical connection to the first transistor device.