International business machines corporation (20240098961). SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract

SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices

Organization Name

international business machines corporation

Inventor(s)

Min Gyu Sung of Latham NY (US)

Ruilong Xie of Niskayuna NY (US)

Heng Wu of Santa Clara CA (US)

Julien Frougier of Albany NY (US)

SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240098961 titled 'SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices

Simplified Explanation

The integrated circuit structure described in the patent application includes a memory cell and multiple transistors formed using channels with alternating layers of conductive semiconductor material and insulative material. Some transistors have the same number of layers of conductive semiconductor material in corresponding channel regions but different numbers of active and inactive layers. An active layer forms a channel electrically coupled to source/drain regions, while a floating layer is electrically isolated from the source/drain regions.

• Memory cell and multiple transistors formed using channels with alternating layers of conductive semiconductor material and insulative material
• Some transistors have the same number of layers of conductive semiconductor material in corresponding channel regions but different numbers of active and inactive layers
• Active layers are electrically coupled to source/drain regions, while floating layers are electrically isolated
• Methods for forming the integrated circuit structure are disclosed

1. 1. 1. Potential Applications

This technology could be applied in the development of advanced memory devices, high-performance computing systems, and integrated circuits for various electronic devices.

1. 1. 1. Problems Solved

This technology solves the problem of optimizing transistor performance by controlling the number of active and inactive layers of conductive semiconductor material in the channel regions.

1. 1. 1. Benefits

The benefits of this technology include improved transistor efficiency, enhanced memory cell functionality, and increased overall performance of integrated circuits.

1. 1. 1. Potential Commercial Applications

The potential commercial applications of this technology include semiconductor manufacturing, memory chip production, and electronic device development.

1. 1. 1. Possible Prior Art

One possible prior art could be the use of multi-layered transistors in integrated circuits to improve performance and efficiency. However, the specific configuration of active and inactive layers as described in this patent application may be a novel approach.

1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing transistor designs in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and existing transistor designs. Further research and testing would be needed to evaluate the performance and efficiency of this technology in comparison to existing designs.

1. 1. 1. 1. What are the potential challenges in implementing this technology on a large scale for commercial production?

The article does not address the potential challenges in scaling up this technology for commercial production. Factors such as manufacturing costs, production scalability, and compatibility with existing fabrication processes could be important considerations in implementing this technology on a larger scale.

Original Abstract Submitted

an integrated circuit structure includes a memory cell and multiple transistors therein. the multiple transistors are formed using channels including a stack having alternating layers of conductive semiconductor material and layers of other material that are insulative. two or more of the multiple transistors have a same number of layers of the conductive semiconductor material in corresponding channel regions but have different numbers of active layers and inactive layers of the conductive semiconductor material. an active layer is a layer forming a channel in the channel region that is electrically coupled to s/d regions in a corresponding transistor, while a floating layer is a layer in the channel region electrically isolated from the s/d regions in the corresponding transistor. methods for forming the integrated circuit structure are disclosed.