International business machines corporation (20240105841). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT simplified abstract

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT

Organization Name

international business machines corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Albert M. Chu of Nashua NH (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Ruilong Xie of Niskayuna NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

REINALDO Vega of Mahopac NY (US)

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105841 titled 'VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT

Simplified Explanation

A vertical-transport field-effect transistor (VTFET) on a wafer has a first width, which is a contacted poly pitch (CPP). The bottom source/drain region of the VTFET extends at least the first width from the VTFET, and a contact from the front side of the VTFET is connected to the bottom source/drain region.

• Vertical-transport field-effect transistor (VTFET) on a wafer
• First width is a contacted poly pitch (CPP)
• Bottom source/drain region extends at least the first width from the VTFET
• Contact from the front side of the VTFET is connected to the bottom source/drain region

Potential Applications

The technology described in this patent application could be applied in the following areas:

• Semiconductor industry
• Electronics manufacturing
• Integrated circuit design

Problems Solved

The innovation addressed in this patent application helps solve the following issues:

• Enhancing transistor performance
• Improving contact reliability
• Increasing efficiency in vertical-transport field-effect transistors

Benefits

The technology offers the following benefits:

• Higher transistor efficiency
• Improved contact connectivity
• Enhanced overall performance of VTFETs

Potential Commercial Applications

With its various benefits and applications, this technology could be commercially utilized in:

• Semiconductor manufacturing companies
• Electronics research and development firms
• Integrated circuit design companies

Possible Prior Art

One possible prior art related to this technology is the development of vertical-transport field-effect transistors with different contact configurations and source/drain regions.

How does this technology compare to existing transistor designs in terms of performance and efficiency?

The article does not provide a direct comparison between this technology and existing transistor designs in terms of performance and efficiency.

What are the specific manufacturing processes involved in creating the VTFET with the described features?

The article does not delve into the specific manufacturing processes involved in creating the VTFET with the described features.

Original Abstract Submitted

a vertical-transport field-effect transistor (vtfet) is on a wafer. the vtfet has a first width. the first width is a contacted poly pitch (cpp). a bottom source/drain region of the vtfet extends at least the first width from the vtfet. a contact from a frontside of the vtfet is connected to the bottom source/drain region.