International business machines corporation (20240130256). PHASE CHANGE MEMORY CELL WITH HEATER simplified abstract

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PHASE CHANGE MEMORY CELL WITH HEATER

Organization Name

international business machines corporation

Inventor(s)

Kangguo Cheng of Schenectady NY (US)

Juntao Li of Cohoes NY (US)

Arthur Roy Gasasira of HALFMOON NY (US)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

Min Gyu Sung of Latham NY (US)

Chanro Park of Clifton Park NY (US)

PHASE CHANGE MEMORY CELL WITH HEATER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130256 titled 'PHASE CHANGE MEMORY CELL WITH HEATER

Simplified Explanation

The present invention provides a method of forming a phase change memory device, including the following steps:

  • Forming a bottom electrode on a supporting structure
  • Sequentially forming a first blanket dielectric layer, a phase-change material layer, a second blanket dielectric layer, and a hard mask on top of the bottom electrode
  • Forming an inner spacer in an opening in the hard mask to modify the opening
  • Extending the opening into the second blanket dielectric layer to create an extended opening
  • Filling the extended opening with a heating element
  • Etching the second blanket dielectric layer, the phase-change material layer, and the first blanket dielectric layer into a second dielectric layer, a phase-change element, and a first dielectric layer respectively
  • Forming a conductive liner surrounding the phase-change element
  • Forming a top electrode on top of the heating element
      1. Potential Applications

- Data storage devices - Non-volatile memory devices

      1. Problems Solved

- Increasing data storage capacity - Improving memory device performance

      1. Benefits

- Faster data access - Higher data storage density - Enhanced device reliability

      1. Potential Commercial Applications
        1. Improving Memory Devices for Enhanced Performance
      1. Possible Prior Art

- Previous methods of forming phase change memory devices using different techniques and materials

        1. Unanswered Questions
        2. How does this method compare to existing techniques for forming phase change memory devices?

This article does not provide a direct comparison with existing techniques, leaving the reader to research further for a comprehensive understanding.

        1. What are the specific materials used in each layer of the memory device structure?

The article mentions the general types of layers formed, but does not delve into the specific materials used in each layer.


Original Abstract Submitted

embodiments of present invention provide a method of forming a phase change memory device. the method includes forming a bottom electrode on a supporting structure; forming a first blanket dielectric layer, a phase-change material layer, a second blanket dielectric layer, and a hard mask sequentially on top of the bottom electrode; forming an inner spacer in an opening in the hard mask to modify the opening; extending the opening into the second blanket dielectric layer to create an extended opening; filling the extended opening with a heating element; etching the second blanket dielectric layer, the phase-change material layer, and the first blanket dielectric layer respectively into a second dielectric layer, a phase-change element, and a first dielectric layer; forming a conductive liner surrounding the phase-change element; and forming a top electrode on top of the heating element. a structure formed thereby is also provided.

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