International business machines corporation (20240120256). Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract

Backside BPR/BSPDN Intergration with Backside Local Interconnect.

Organization Name

international business machines corporation

Inventor(s)

Albert M. Chu of Nashua NH (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Huai Huang of Clifton Park NY (US)

Ruilong Xie of Niskayuna NY (US)

Backside BPR/BSPDN Intergration with Backside Local Interconnect. - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240120256 titled 'Backside BPR/BSPDN Intergration with Backside Local Interconnect.

Simplified Explanation

The semiconductor device described in the abstract includes backside power rails and backside local signal lines located between specific spaces within the device.

• The semiconductor device has backside power rails positioned between n-channel field effect transistor to n-channel field effect transistor spaces, as well as between at least one p-channel field effect transistor to p-channel field effect transistor space.
• Additionally, the device includes backside local signal lines located between the backside power rails.

Potential Applications

This technology could be applied in:

• Integrated circuits
• Semiconductor devices
• Electronics manufacturing

Problems Solved

This technology helps address issues related to:

• Power distribution in semiconductor devices
• Signal transmission within integrated circuits

Benefits

The benefits of this technology include:

• Improved power distribution efficiency
• Enhanced signal transmission capabilities
• Increased overall performance of semiconductor devices

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Consumer electronics
• Telecommunications
• Automotive industry

Possible Prior Art

There is no known prior art related to this specific semiconductor device design.

How does this technology impact the overall size of the semiconductor device?

This article does not address how the inclusion of backside power rails and local signal lines affects the physical dimensions of the semiconductor device.

What materials are used in the construction of the backside power rails and local signal lines?

The article does not provide information on the specific materials utilized in the fabrication of the backside power rails and local signal lines.

Original Abstract Submitted

a semiconductor device includes backside power rails located between n channel field effect transistor to n channel field effect transistor spaces, and between at least one p channel field effect transistor to p channel field effect transistor space; and backside local signal lines located between the backside power rails.