17932919. SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract (International Business Machines Corporation)

SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA

Organization Name

International Business Machines Corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Kangguo Cheng of Schenectady NY (US)

Julien Frougier of Albany NY (US)

Chanro Park of Clifton Park NY (US)

Min Gyu Sung of Latham NY (US)

SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA - A simplified explanation of the abstract

This abstract first appeared for US patent application 17932919 titled 'SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA

Simplified Explanation

The semiconductor structure described in the patent application includes a backside contact structure with increased contact area for improved performance of field effect transistors. The structure features source/drain regions with inverted V-shaped areas, backside power rail connected to source/drain regions through backside metal contacts, and electrically isolating epitaxial layers.

• Source/drain regions have inverted V-shaped areas for increased contact area.
• Backside metal contacts wrap around top portions of source/drain regions.
• Backside power rail is connected to source/drain regions through backside metal contacts.
• Epitaxial layers electrically isolate adjacent source/drain regions from backside power rail.

Potential Applications

This technology could be applied in the manufacturing of high-performance field effect transistors for various electronic devices, such as smartphones, computers, and other semiconductor-based products.

Problems Solved

This technology solves the problem of limited contact area in traditional semiconductor structures, leading to improved performance and efficiency of field effect transistors.

Benefits

The benefits of this technology include increased contact area, improved electrical connectivity, enhanced performance of field effect transistors, and overall efficiency in semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology could be in the semiconductor industry for the production of advanced electronic devices with higher performance and reliability.

Possible Prior Art

One possible prior art could be the use of different contact structures in semiconductor devices to improve electrical connectivity and performance. However, the specific design of the backside contact structure with increased contact area as described in this patent application may be a novel innovation.

How does this technology compare to existing backside contact structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing backside contact structures in terms of performance and efficiency. Further research or testing may be needed to evaluate the advantages of this technology over existing solutions.

What are the potential challenges or limitations in implementing this technology in large-scale semiconductor manufacturing processes?

The article does not address potential challenges or limitations in implementing this technology in large-scale semiconductor manufacturing processes. Factors such as cost, scalability, and compatibility with existing manufacturing techniques could be important considerations that need to be explored further.

Original Abstract Submitted

A semiconductor structure having a backside contact structure with increased contact area includes a plurality of source/drain regions within a field effect transistor, each of the plurality of source/drain regions includes a top portion having an inverted V-shaped area. A backside power rail is electrically connected to at least one source/drain region through a backside metal contact. The backside metal contact wraps around a top portion of the at least one source/drain region. A tip of the top portion of the plurality of source/drain regions points towards the backside power rail with the top portion of the at least one source/drain region being in electric contact with the backside metal contact. A first epitaxial layer is in contact with a top portion of at least another source/drain region adjacent to the at least one source/drain region for electrically isolating the at least another source/drain region from the backside power rail.