17932677. DUAL DIELECTRIC STRESSORS simplified abstract (International Business Machines Corporation)

DUAL DIELECTRIC STRESSORS

Organization Name

International Business Machines Corporation

Inventor(s)

Kangguo Cheng of Schenectady NY (US)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

CHANRO Park of CLIFTON PARK NY (US)

Min Gyu Sung of Latham NY (US)

DUAL DIELECTRIC STRESSORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17932677 titled 'DUAL DIELECTRIC STRESSORS

Simplified Explanation

The patent application describes a structure with lower and upper sets of semiconductor channel layers, each with a dielectric layer adjacent to them that applies stress of opposite polarities. The structure also includes lower and upper stacks of nanosheet layers with corresponding dielectric layers applying stress of opposite polarities.

• Lower and upper sets of semiconductor channel layers
• Lower and upper dielectric layers adjacent to the semiconductor channel layers
• Dielectric layers applying stress of opposite polarities to the semiconductor channel layers
• Lower and upper stacks of nanosheet layers
• Dielectric layers adjacent to the nanosheet layers applying stress of opposite polarities

Potential Applications

This technology could be applied in advanced semiconductor devices, such as transistors, to improve performance and efficiency.

Problems Solved

This technology helps to enhance the performance and reliability of semiconductor devices by optimizing stress levels in the channel layers.

Benefits

The technology offers improved control over stress levels in semiconductor devices, leading to better performance and longer lifespan.

Potential Commercial Applications

This innovation could be valuable in the development of next-generation electronic devices, data processing systems, and other high-tech applications.

Possible Prior Art

Prior art may include similar structures or methods used in the semiconductor industry to optimize stress levels in channel layers.

How does this technology compare to existing stress optimization techniques in semiconductor devices?

This article does not provide a direct comparison to existing stress optimization techniques in semiconductor devices.

What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?

This article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes.

Original Abstract Submitted

A lower set of semiconductor channel layers, an upper set of semiconductor channel layers, a lower dielectric layer adjacent to the lower set of semiconductor channel layers, the lower dielectric layer includes a first polarity stress on the lower set of semiconductor channel layers, and an upper dielectric layer adjacent to the upper set of semiconductor channel layers, the lower dielectric layer includes a second polarity stress on the upper set of semiconductor channel layers with opposite polarity stress of the first polarity stress. Forming a lower stack of nanosheet layers and an upper stack of nanosheet layers, forming a lower dielectric layer adjacent to the lower stack of nanosheet layers, the lower dielectric layer includes a first polarity stress, and forming an upper dielectric layer adjacent to the upper stack of nanosheet layers, the upper dielectric layer includes a second polarity stress with opposite polarity.