17932557. HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (International Business Machines Corporation)

HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS

Organization Name

International Business Machines Corporation

Inventor(s)

Kangguo Cheng of Schenectady NY (US)

Ruilong Xie of Niskayuna NY (US)

Julien Frougier of Albany NY (US)

Chanro Park of Clifton Park NY (US)

Min Gyu Sung of Latham NY (US)

HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17932557 titled 'HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS

Simplified Explanation

The abstract describes a semiconductor device with two Gate-All-Around Field Effect Transistors (GAA FETs), each with a different gate dielectric structure. The first GAA FET has a simpler gate dielectric structure compared to the second GAA FET, which includes an additional gate dielectric layer. Both FETs have multiple gate conductors separated by the gate dielectric layers.

• The semiconductor device includes a first GAA FET and a second GAA FET.
• The second GAA FET has a more complex gate dielectric structure with two layers, while the first GAA FET has only one layer.
• Both FETs have multiple gate conductors within their gate structures.
• The gate dielectric structure of the first GAA FET has lower resistance compared to the second GAA FET.
• The gate conductors of the first and second GAA FETs are separated by the gate dielectric layers.

Potential Applications

This technology could be applied in advanced semiconductor devices, such as high-performance integrated circuits and microprocessors.

Problems Solved

This innovation helps in improving the performance and efficiency of semiconductor devices by optimizing the gate dielectric structures.

Benefits

- Enhanced performance of semiconductor devices - Increased efficiency and reliability - Potential for higher integration density

Potential Commercial Applications

"Optimized Gate Dielectric Structure in Semiconductor Devices: Improving Performance and Efficiency"

Possible Prior Art

There may be prior art related to optimizing gate dielectric structures in semiconductor devices to improve performance and efficiency.

Unanswered Questions

How does the gate dielectric structure impact the overall performance of the semiconductor device?

The article does not delve into the specific performance metrics affected by the gate dielectric structure.

Are there any limitations or drawbacks associated with the use of multiple gate dielectric layers in semiconductor devices?

The potential drawbacks or limitations of using multiple gate dielectric layers are not discussed in the article.

Original Abstract Submitted

A semiconductor includes a first GAA FET and second GAA FET. The second GAA FET includes a first gate dielectric and second gate dielectric within its gate structure. The first GAA FET includes just the first gate dielectric within its gate structure. The gate dielectric structure of the first GAA FET provides for a nominal or a lesser effective gate dielectric or gate dielectric resistance relative to an effective gate dielectric structure of the second GAA FET. The first GAA FET further includes a first gate conductor within its gate structure and the second GAA FET further includes the first gate conductor and a second gate conductor within its gate structure. The first gate conductor and the second gate conductor are separated by the second gate dielectric.