17457686. METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
Contents
METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
CHANRO Park of CLIFTON PARK NY (US)
Kangguo Cheng of Schenectady NY (US)
Ruilong Xie of Niskayuna NY (US)
ChoongHyun Lee of Chigasaki (JP)
METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17457686 titled 'METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS
Simplified Explanation
The patent application describes a method for forming nanosheet layers on a substrate and selectively removing sacrificial layers to create recessed areas. Here are the key points:
- The method involves forming multiple layers of nanosheets and sacrificial layers on a substrate.
- The nanosheet layers and sacrificial layers are arranged in alternating layers.
- The sacrificial layers are made of a first material, while the nanosheet layers are made of a different material.
- The first sacrificial layers are selectively removed, and second sacrificial layers made of a second material are formed in their place.
- The second sacrificial layers are then recessed at an even rate.
Potential applications of this technology:
- Semiconductor manufacturing: The method can be used to create recessed areas in nanosheet layers, which can be useful in the fabrication of semiconductor devices.
- Microelectronics: The technique can be applied to create precise recessed features in microelectronic components, improving their performance and functionality.
- Nanotechnology: The method can be utilized in the production of nanoscale devices and structures, enabling precise control over their dimensions and properties.
Problems solved by this technology:
- Control over recessed features: The method provides a way to create recessed areas with a high level of precision and control, allowing for the fabrication of complex structures.
- Material compatibility: By using sacrificial layers made of different materials, the method enables the integration of multiple materials with different properties in a single device or structure.
Benefits of this technology:
- Enhanced device performance: The ability to create recessed areas can improve the performance of semiconductor devices and microelectronic components by reducing parasitic capacitance and improving electrical characteristics.
- Versatile fabrication method: The method offers flexibility in designing and fabricating complex structures with recessed features, opening up new possibilities for device functionality.
- Material integration: The use of different sacrificial materials allows for the integration of multiple materials with different properties, expanding the range of materials that can be used in device fabrication.
Original Abstract Submitted
A method including forming a plurality of nanosheet layers on a substrate and forming a plurality of first sacrificial layers on the substrate, wherein the plurality of nanosheet layers and the plurality of first sacrificial layers are arranged in alternating layers, where the plurality of first sacrificial layers is comprised of a first material. Selectively removing the plurality of first sacrificial layers and forming a plurality of second sacrificial layers where the plurality of first sacrificial layers were removed, where the plurality of second sacrificial layers is comprised of a second material, where the first material and the second material are different. Recessing the plurality of second sacrificial layers at an even rate.
