International business machines corporation (20240113193). BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL simplified abstract

BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL

Organization Name

international business machines corporation

Inventor(s)

Tao Li of Slingerlands NY (US)

Shogo Mochizuki of Mechanicville NY (US)

Kisik Choi of Watervliet NY (US)

Ruilong Xie of Niskayuna NY (US)

BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113193 titled 'BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL

Simplified Explanation

The semiconductor structure described in the patent application includes a first source-drain region, a second source-drain region, at least one channel region connecting the two source-drain regions, and a gate adjacent to the channel region. A bottom dielectric isolation region is positioned inward of the gate, with first and second bottom silicon regions located inward of the first and second source-drain regions. A back side contact extends through the second bottom silicon region into the second source-drain region.

• First source-drain region
• Second source-drain region
• Channel region connecting the two source-drain regions
• Gate adjacent to the channel region
• Bottom dielectric isolation region
• First and second bottom silicon regions
• Back side contact extending through the second bottom silicon region

Potential Applications

The technology described in this patent application could be applied in the development of advanced semiconductor devices, such as transistors and integrated circuits.

Problems Solved

This technology addresses the need for improved performance and efficiency in semiconductor structures by optimizing the layout and design of key components.

Benefits

- Enhanced functionality and performance of semiconductor devices - Increased efficiency and reliability - Potential for miniaturization and cost reduction in device manufacturing processes

Potential Commercial Applications

Optimizing semiconductor structures for improved performance and efficiency could have applications in various industries, including electronics, telecommunications, and computing.

Possible Prior Art

One possible prior art in this field could be the development of similar semiconductor structures with different configurations or materials, aimed at achieving similar performance enhancements.

How does this technology compare to existing semiconductor structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor structures to evaluate the advantages and limitations of the proposed innovation.

What are the potential challenges or limitations of implementing this technology in practical applications?

The article does not address the potential obstacles or constraints that may arise when integrating this technology into real-world semiconductor devices and manufacturing processes.

Original Abstract Submitted

a semiconductor structure includes a first source-drain region; a second source-drain region; at least one channel region coupling the first and second source-drain regions; and a gate adjacent the at least one channel region. a bottom dielectric isolation region is located inward of the gate. first and second bottom silicon regions are respectively located inward of the first and second source-drain regions. a back side contact projects through the second bottom silicon region into the second source-drain region.