17956309. EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE simplified abstract (International Business Machines Corporation)

EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE

Organization Name

International Business Machines Corporation

Inventor(s)

Daniel Schmidt of Niskayuna NY (US)

Ruilong Xie of Niskayuna NY (US)

Alexander Reznicek of Troy NY (US)

Tsung-Sheng Kang of Ballston Lake NY (US)

EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17956309 titled 'EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE

Simplified Explanation

The semiconductor device described in the abstract consists of a stack of sheet semiconductor layers with source and drain regions on opposing sides of a channel region. A first contact is present to an upper sheet portion of the source and drain regions, while an extended epitaxial semiconductor region is in contact with the lower sheet portion of the source/drain regions. A second contact is in direct contact with the upper surface of the extended epitaxial semiconductor region, and a notch may be present in the upper surface to increase contact surface to the second contact.

• Stack of sheet semiconductor layers
• Source and drain regions on opposing sides of a channel region
• First contact to upper sheet portion of source and drain regions
• Extended epitaxial semiconductor region in contact with lower sheet portion of source/drain regions
• Second contact in direct contact with upper surface of extended epitaxial semiconductor region
• Notch in upper surface of extended semiconductor region

Potential Applications

The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, telecommunications, and consumer electronics.

Problems Solved

This technology addresses the need for improved contact and performance in semiconductor devices by providing a structure that enhances the contact surface area between different regions within the device, leading to better overall performance and efficiency.

Benefits

Some of the benefits of this technology include increased device performance, improved contact resistance, enhanced reliability, and potentially reduced power consumption in electronic devices utilizing these semiconductor structures.

Potential Commercial Applications

The technology described in this patent application has potential commercial applications in the semiconductor industry for the development of next-generation electronic devices with improved performance and efficiency. A potential SEO-optimized title for this section could be "Commercial Applications of Advanced Semiconductor Device Technology."

Possible Prior Art

One possible prior art for this technology could be the development of similar semiconductor structures with different contact configurations or materials, aimed at improving device performance and reliability.

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and existing semiconductor device structures in terms of performance and efficiency. Further research or testing would be needed to determine the specific advantages of this technology over existing solutions.

What are the potential challenges or limitations of implementing this technology in practical electronic devices?

The article does not address the potential challenges or limitations of implementing this technology in practical electronic devices. Factors such as manufacturing costs, scalability, and compatibility with existing technologies could pose challenges that need to be explored further.

Original Abstract Submitted

A semiconductor device that includes a stack of sheet semiconductor layers, and source and drain regions positioned on opposing sides of a channel region in the stack of sheet semiconductor layers. A first contact is present to an upper sheet portion of the source and drain regions for the stack of sheet semiconductor layers. An extended epitaxial semiconductor region is present in contact with the lower sheet portion of the source/drain regions for the stack of sheet semiconductor layers. A second contact is present in direct contact with an upper surface of the extended epitaxial semiconductor region. A notch may be present in the upper surface of the extended semiconductor region to increase contact surface to the second contact.