International business machines corporation (20240105607). BURIED POWER RAIL DIRECTLY CONTACTING BACKSIDE POWER DELIVERY NETWORK simplified abstract
Contents
- 1 BURIED POWER RAIL DIRECTLY CONTACTING BACKSIDE POWER DELIVERY NETWORK
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BURIED POWER RAIL DIRECTLY CONTACTING BACKSIDE POWER DELIVERY NETWORK - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
BURIED POWER RAIL DIRECTLY CONTACTING BACKSIDE POWER DELIVERY NETWORK
Organization Name
international business machines corporation
Inventor(s)
SOMNATH Ghosh of CLIFTON PARK NY (US)
Ruilong Xie of Niskayuna NY (US)
Kisik Choi of Watervliet NY (US)
BURIED POWER RAIL DIRECTLY CONTACTING BACKSIDE POWER DELIVERY NETWORK - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105607 titled 'BURIED POWER RAIL DIRECTLY CONTACTING BACKSIDE POWER DELIVERY NETWORK
Simplified Explanation
The patent application describes a semiconductor structure with buried power rails extending below the backside of the semiconductor substrate, providing power delivery networks and interlayer dielectric material for isolation.
- The semiconductor structure includes buried power rails that extend below the backside of the semiconductor substrate.
- The buried power rails are in direct contact with a portion of the first metal layer of the backside power delivery network.
- The buried power rails and the first metal layer are composed of the same conductive material.
- An interlayer dielectric material isolates the first metal layer of the backside power distribution network from the backside of the semiconductor substrate.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices, power management systems, and integrated circuits.
Problems Solved
This innovation solves the problem of efficient power delivery and distribution in semiconductor structures, ensuring reliable performance and functionality.
Benefits
The benefits of this technology include improved power delivery efficiency, enhanced performance of semiconductor devices, and increased reliability of integrated circuits.
Potential Commercial Applications
Potential commercial applications of this technology include the semiconductor industry, electronics manufacturing, and power management systems.
Possible Prior Art
One possible prior art could be the use of buried power rails in semiconductor structures for power delivery networks, but the specific configuration and materials used in this patent application may be novel.
Unanswered Questions
1. How does the interlayer dielectric material impact the overall performance of the semiconductor structure? 2. Are there any specific manufacturing processes required to implement this technology in semiconductor fabrication?
Original Abstract Submitted
an approach to form a semiconductor structure with a plurality of buried power rails in a semiconductor substrate where at least one buried power rail extends below the backside of the semiconductor substrate. the semiconductor structure provides at least one portion of the first metal layer of the backside power delivery network that surrounds a bottom portion of the buried power rail below the backside of the semiconductor substrate. the bottom portion of the buried power rail is in direct contact with the portion of the first metal layer of the backside power delivery network where the buried power rail and the first metal layer are composed of the same conductive material. the semiconductor structure includes a portion of an interlayer dielectric material isolating the first metal layer of the backside power distribution network from the backside of the semiconductor substrate.
