17543215. COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Julien Frougier of Albany NY (US)

Nicolas Loubet of Guilderland NY (US)

Ruilong Xie of Niskayuna NY (US)

Marc A. Bergendahl of Rensselaer NY (US)

Joshua M. Rubin of Albany NY (US)

COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17543215 titled 'COMPLEMENTARY FIELD EFFECT TRANSISTORS HAVING MULTIPLE VOLTAGE THRESHOLDS

Simplified Explanation

The patent application describes a structure called CFET (complementary field effect transistor) that consists of two CFETs formed on a substrate. Each CFET includes a top FET and a bottom FET, both having at least one nanosheet channel. The top FET of each CFET has a first polarity, while the bottom FET of each CFET has a second polarity. The top FET of the first CFET uses a first work function metal, and the top FET of the second CFET uses a second work function metal.

  • CFET structure with two CFETs formed on a substrate
  • Each CFET consists of a top FET and a bottom FET
  • Both top and bottom FETs have at least one nanosheet channel
  • Top FETs have a first polarity, while bottom FETs have a second polarity
  • First CFET's top FET uses a first work function metal
  • Second CFET's top FET uses a second work function metal

Potential Applications

  • Integrated circuits
  • Digital logic circuits
  • Memory devices
  • Microprocessors

Problems Solved

  • Improved performance and efficiency of field effect transistors
  • Enhanced control over polarity and work function in CFET structures
  • Increased functionality and versatility in nanosheet-based transistor designs

Benefits

  • Higher performance and speed in electronic devices
  • Lower power consumption and energy efficiency
  • Improved integration and miniaturization of electronic components
  • Enhanced functionality and flexibility in circuit design


Original Abstract Submitted

A CFET (complementary field effect transistor) structure including a substrate, a first CFET formed above the substrate, and a second CFET formed above the substrate. Each CFET includes a top FET and a bottom FET. Each of the top FET and bottom FET includes at least one nanosheet channel. The top FET of each CFET has a first polarity. The bottom FET of each a CFET comprises a second polarity. The top FET of the first CFET includes a first work function metal, and the top FET of the second CFET includes a second work function metal.

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