SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION

Organization Name

International Business Machines Corporation

Inventor(s)

SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17520690 titled 'SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION

Simplified Explanation

The abstract describes a semiconductor device that includes various components such as a substrate, shallow trench isolation (STI) liner, bottom dielectric isolation (BDI) region, device channel, and gate stack.

The device includes a substrate, which serves as the foundation for the semiconductor components.
A first shallow trench isolation (STI) liner is placed above the substrate and is in contact with it. This liner helps to isolate different components from each other.
Above the STI liner, there is a bottom dielectric isolation (BDI) region. This region also serves as an isolation layer and is in contact with the STI liner.
The device channel is positioned above the BDI region. This channel is a crucial part of the semiconductor device and allows for the flow of electrical current.
Finally, a gate stack is placed above and in contact with the device channel. The gate stack is responsible for controlling the flow of current through the device channel.

Potential applications of this technology:

This semiconductor device can be used in various electronic devices such as smartphones, computers, and other consumer electronics.
It can also be utilized in industrial applications, including automation systems, robotics, and communication devices.

Problems solved by this technology:

The use of the STI liner and BDI region helps to isolate different components, reducing the risk of interference and improving the overall performance of the semiconductor device.
The gate stack allows for precise control of current flow, enabling efficient operation of the device.

Benefits of this technology:

Improved performance and reliability of the semiconductor device due to the effective isolation provided by the STI liner and BDI region.
Enhanced control over current flow through the gate stack, resulting in more efficient operation and reduced power consumption.

Original Abstract Submitted

A semiconductor device includes a substrate, a first shallow trench isolation (STI) liner disposed above and in contact with the substrate, a bottom dielectric isolation (BDI) region disposed above the substate and in contact with the STI liner, a device channel disposed above the BDI region, and a gate stack disposed above and in contact with the device channel.

17520690. SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)

Contents

SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION

Organization Name

Inventor(s)