17528279. TUNNEL FIELD EFFECT TRANSISTOR DEVICES simplified abstract (International Business Machines Corporation)

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TUNNEL FIELD EFFECT TRANSISTOR DEVICES

Organization Name

International Business Machines Corporation

Inventor(s)

Alexander Reznicek of Troy NY (US)

Bahman Hekmatshoartabari of White Plains NY (US)

Ruilong Xie of Niskayuna NY (US)

ChoongHyun Lee of Chigasaki (JP)

TUNNEL FIELD EFFECT TRANSISTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17528279 titled 'TUNNEL FIELD EFFECT TRANSISTOR DEVICES

Simplified Explanation

The abstract describes a patent application for a semiconductor tunnel FET (field effect transistor) that consists of multiple nanosheet channels placed between two source/drain regions. The first source/drain region is made of p-type material, while the second source/drain region is made of n-type material.

  • The patent application is for a new type of transistor called a semiconductor tunnel FET.
  • The transistor includes multiple nanosheet channels, which are thin layers of semiconductor material.
  • The nanosheet channels are positioned between two source/drain regions.
  • The first source/drain region is made of p-type material, which has a positive charge.
  • The second source/drain region is made of n-type material, which has a negative charge.
  • The use of nanosheet channels and the combination of p-type and n-type materials allow for improved performance and efficiency of the transistor.

Potential Applications

  • This technology can be used in various electronic devices, such as smartphones, tablets, and computers.
  • It can also be applied in power management systems, sensors, and communication devices.

Problems Solved

  • The semiconductor tunnel FET addresses the limitations of traditional transistors by improving performance and efficiency.
  • It overcomes the challenges of power consumption and heat dissipation in electronic devices.
  • The use of nanosheet channels allows for better control of the flow of electrons, resulting in faster and more reliable operation.

Benefits

  • The semiconductor tunnel FET offers improved performance and efficiency compared to traditional transistors.
  • It reduces power consumption and heat generation, leading to longer battery life and improved device reliability.
  • The use of nanosheet channels enhances the control of electron flow, resulting in faster and more responsive electronic devices.


Original Abstract Submitted

A semiconductor tunnel FET (field effect transistor) including a plurality of nanosheet channels disposed between a first source/drain region and a second source/drain region. The first source/drain region includes a p-type material; and the second source/drain region includes an n-type material.

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