17450121. VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN simplified abstract (International Business Machines Corporation)

VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN

Organization Name

International Business Machines Corporation

Inventor(s)

Brent Anderson of Jericho VT (US)

Junli Wang of Slingerlands NY (US)

Indira Seshadri of Niskayuna NY (US)

Chen Zhang of Guilderland NY (US)

Ruilong Xie of Niskayuna NY (US)

Joshua M. Rubin of Albany NY (US)

Hemanth Jagannathan of Niskayuna NY (US)

VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 17450121 titled 'VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN

Simplified Explanation

The abstract describes an apparatus that includes a fin, a gate, and a gate contact. The fin is located in a first layer, while the gate is adjacent to the fin in the same layer. The gate contact is positioned on top of the gate and in a second layer, which is placed above the first layer.

• The apparatus consists of a fin, gate, and gate contact.
• The fin is located in a first layer.
• The gate is positioned adjacent to the fin in the first layer.
• The gate contact is placed on top of the gate.
• The gate contact is located in a second layer, which is above the first layer.

Potential Applications:

• This apparatus can be used in semiconductor devices.
• It can be applied in the manufacturing of transistors.

Problems Solved:

• The apparatus provides a compact and efficient design for semiconductor devices.
• It allows for better integration of the fin, gate, and gate contact.

Benefits:

• The compact design saves space and allows for more components to be placed in a limited area.
• The efficient integration of the fin, gate, and gate contact improves the performance of semiconductor devices.

Original Abstract Submitted

An apparatus includes a fin, a gate, and a gate contact. A portion of the fin is disposed in a first layer. The gate is disposed in the first layer and adjacent to the fin. The gate contact is disposed on the gate and in a second layer, wherein the second layer is disposed on the first layer such that the gate contact is above the fin.