International business machines corporation (20240113200). INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION simplified abstract

INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION

Organization Name

international business machines corporation

Inventor(s)

HUIMEI Zhou of ALBANY NY (US)

MIAOMIAO Wang of ALBANY NY (US)

Julien Frougier of ALBANY NY (US)

Andrew M. Greene of Slingerlands NY (US)

Barry Paul Linder of Hastings-on-Hudson NY (US)

Kai Zhao of ALBANY NY (US)

Ruilong Xie of Niskayuna NY (US)

Tian Shen of San Jose CA (US)

Veeraraghavan S. Basker of Fremont CA (US)

INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113200 titled 'INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION

Simplified Explanation

The integrated circuit apparatus described in the patent application includes a well contact with source/drain structures, a metal vertical portion, inner spacers, bottom dielectric isolation, and a well portion embedded in the substrate.

• The well contact consists of first and second source/drain structures on the substrate.
• A metal vertical portion connects the substrate between the source/drain structures.
• Inner spacers insulate the vertical portion from the adjacent source/drain structures.
• Bottom dielectric isolation electrically insulates the source/drain structures from the substrate.
• The well portion, differently doped than the substrate, is embedded in the substrate in alignment with the vertical portion.

Potential Applications

This technology could be applied in the manufacturing of advanced integrated circuits, such as in high-performance computing, telecommunications, and consumer electronics.

Problems Solved

This innovation helps in improving the performance and efficiency of integrated circuits by enhancing the electrical connections and isolation between different components on the substrate.

Benefits

The integrated circuit apparatus offers better electrical connectivity, reduced interference, and improved overall functionality of electronic devices.

Potential Commercial Applications

The technology can be utilized in the production of cutting-edge semiconductor devices for various industries, including automotive, aerospace, and medical equipment.

Possible Prior Art

Prior art in the field of semiconductor manufacturing may include similar techniques for creating well contacts and source/drain structures on substrates, but the specific combination of features described in this patent application may be novel.

How does this technology compare to existing well contact designs in terms of performance and efficiency?

This article does not provide a direct comparison with existing well contact designs in terms of performance and efficiency. Further research or testing may be needed to evaluate the advantages of this technology over current solutions.

What are the potential limitations or challenges in implementing this integrated circuit apparatus on a large scale?

The article does not address potential limitations or challenges in implementing this technology on a large scale. Factors such as manufacturing costs, scalability, and compatibility with existing processes could be important considerations that need to be explored further.

Original Abstract Submitted

an integrated circuit apparatus includes a substrate and a well contact that is disposed on the substrate. the well contact includes first and second source/drain structures that are disposed on the substrate; a metal vertical portion that contacts the substrate immediately between the first and second source/drain structures; inner spacers that electrically insulate the vertical portion from the adjacent source/drain structures; bottom dielectric isolation that electrically insulates the source/drain structures from the substrate; and a well portion that is embedded into the substrate in registry with the vertical portion. the well portion is doped differently than the substrate.