17550724. SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Jingyun Zhang of Albany NY (US)

Reinaldo Vega of Mahopac NY (US)

Alexander Reznicek of Troy NY (US)

SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17550724 titled 'SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE

Simplified Explanation

The abstract describes a semiconductor structure with a recessed portion in the source/drain region and a metal contact with two portions. The first portion of the metal contact has a smaller width than the second portion, and at least a part of the second portion is placed in the recessed portion of the source/drain region.

  • The semiconductor structure includes a source/drain region with a recessed portion.
  • A metal contact is present in the structure, consisting of a first portion and a second portion.
  • The first portion of the metal contact has a smaller width than the second portion.
  • The second portion of the metal contact, with a greater width, is placed in the recessed portion of the source/drain region.

Potential Applications

  • This semiconductor structure can be used in various electronic devices that utilize semiconductors, such as integrated circuits, transistors, and microprocessors.
  • It can be applied in the manufacturing of high-performance electronic devices that require efficient electrical connections.

Problems Solved

  • The recessed portion in the source/drain region allows for better integration and contact between the metal contact and the semiconductor structure.
  • The different widths of the metal contact portions enable improved electrical conductivity and performance.

Benefits

  • The recessed portion enhances the electrical connection between the metal contact and the source/drain region, leading to improved device performance.
  • The varying widths of the metal contact portions allow for more efficient current flow and reduced resistance.
  • This semiconductor structure can contribute to the development of faster and more reliable electronic devices.


Original Abstract Submitted

A semiconductor structure includes a source/drain region having a recessed portion. The semiconductor structure further includes a metal contact having a first portion and a second portion. The first portion of the metal contact has a first width and the second portion of the metal contact has a second width greater than the first width. At least a portion of the second portion of the metal contact is disposed in the recessed portion of the source/drain region.

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