17936393. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract (International Business Machines Corporation)
Contents
- 1 VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY
Organization Name
International Business Machines Corporation
Inventor(s)
Brent A. Anderson of Jericho VT (US)
Albert M. Chu of Nashua NH (US)
Ruilong Xie of Niskayuna NY (US)
Junli Wang of Slingerlands NY (US)
VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY - A simplified explanation of the abstract
This abstract first appeared for US patent application 17936393 titled 'VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY
Simplified Explanation
The abstract describes a patent application for a Vertical Tunneling Field Effect Transistor (VTFET) structure on a wafer, with a shared frontside contact connected to multiple top source/drain regions and a backside power delivery network.
- VTFET structure on a wafer
- Shared frontside contact connected to multiple top source/drain regions
- Backside power delivery network
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Power electronics
- Semiconductor devices
- Integrated circuits
Problems Solved
The innovation addressed in this patent application helps solve the following issues:
- Efficient power delivery in VTFET structures
- Simplified contact design for multiple VTFETs on a wafer
Benefits
The technology offers the following benefits:
- Improved power efficiency
- Enhanced performance of VTFET devices
- Streamlined manufacturing process for VTFET arrays
Potential Commercial Applications
The potential commercial applications of this technology include:
- Power management systems
- High-speed switching applications
- Energy-efficient electronics
Possible Prior Art
One possible prior art for this technology could be the development of shared contact structures in semiconductor devices to improve power delivery efficiency.
Unanswered Questions
How does this technology compare to traditional power delivery methods in VTFET structures?
The article does not provide a direct comparison between this technology and traditional power delivery methods in VTFET structures. Further research or experimentation may be needed to evaluate the performance differences.
What are the potential scalability limitations of implementing this technology in large-scale semiconductor manufacturing?
The article does not address the potential scalability limitations of implementing this technology in large-scale semiconductor manufacturing. Additional studies or pilot projects may be required to assess the scalability of this innovation.
Original Abstract Submitted
A first VTFET is provided on a wafer. A second VTFET is adjacent to the first VTFET on the wafer. A backside power deliver network is on a backside of the wafer. A shared frontside contact is on a frontside of the wafer. The shared frontside contact is connected to a first top source/drain region of the first VTFET, a second top source/drain region of the second VTFET, and the backside power delivery network.
