International business machines corporation (20240096951). STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES simplified abstract

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STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES

Organization Name

international business machines corporation

Inventor(s)

Sagarika Mukesh of ALBANY NY (US)

Tao Li of Slingerlands NY (US)

Prabudhya Roy Chowdhury of Albany NY (US)

Liqiao Qin of Albany NY (US)

Nikhil Jain of Apple Valley MN (US)

Ruilong Xie of Niskayuna NY (US)

STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096951 titled 'STACKED FETS WITH CONTACT PLACEHOLDER STRUCTURES

Simplified Explanation

The semiconductor structure described in the abstract includes multiple FET device regions with source/drain regions on each side of a gate structure. Placeholder structures are also present adjacent to the source/drain regions of the FETs.

  • The semiconductor structure includes a first FET device region with multiple first FETs and a second FET device region with multiple second FETs.
  • Each FET in the structure has source/drain regions located on each side of a gate structure.
  • Placeholder structures are located adjacent to the source/drain regions of the FETs to provide additional support or functionality.

Potential Applications

This semiconductor structure could be used in various electronic devices such as smartphones, tablets, and computers.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by providing a more stable and reliable structure.

Benefits

The structure allows for better control and management of electrical currents, leading to enhanced overall device performance.

Potential Commercial Applications

The semiconductor structure could be utilized in the manufacturing of advanced electronic devices for consumer and industrial markets.

Possible Prior Art

One possible prior art could be the use of placeholder structures in semiconductor devices to improve their functionality and reliability.

Unanswered Questions

How does the placement of the placeholder structures impact the overall performance of the semiconductor structure?

The article does not delve into the specific effects of the placement of the placeholder structures on the functionality of the semiconductor structure.

Are there any limitations to the scalability of this technology for mass production?

The article does not address any potential limitations or challenges related to scaling up the production of semiconductor structures with placeholder structures.


Original Abstract Submitted

a semiconductor structure is provided that includes a first fet device region including a plurality of first fets, each first fet of the plurality of first fets includes a first source/drain region located on each side of a functional gate structure. a second fet device region is stacked above the first fet device region and includes a plurality of second fets, each second fet of the plurality of second fets includes a second source/drain region located on each side of a functional gate structure. the structure further includes at least one first front side contact placeholder structure located adjacent to one of the first source/drain regions of at least one the first fets, and at least one second front side contact placeholder structure located adjacent to at least one of the second source/drain regions of at one of the second fets.